是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | IN-LINE, R-PDIP-T14 |
针数: | 14 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.77 |
Is Samacsys: | N | 其他特性: | HIGH INPUT IMPEDANCE |
配置: | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (Abs) (ID): | 1.6 A | 最大漏极电流 (ID): | 1.4 A |
最大漏源导通电阻: | 2 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 50 pF | JESD-30 代码: | R-PDIP-T14 |
JESD-609代码: | e0 | 元件数量: | 4 |
端子数量: | 14 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL AND P-CHANNEL |
功耗环境最大值: | 1.5 W | 最大功率耗散 (Abs): | 1.5 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VQ3001N7 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 1.6A I(D), 40V, 4-Element, N-Channel and P-Channel, | |
VQ3001NF | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.41A I(D), 40V, 4-Element, N-Channel and P-Channel, | |
VQ3001P | VISHAY |
获取价格 |
Dual N-/Dual P-Channel 30-V (D-S) MOSFETs | |
VQ3001P | TEMIC |
获取价格 |
Power Field-Effect Transistor, 0.85A I(D), 30V, 1ohm, 4-Element, N-Channel and P-Channel, | |
VQ7254 | SUPERTEX |
获取价格 |
N- and P-Channel Quad Power MOSFET Arrays | |
VQ7254J | VISHAY |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 20V, 3ohm, 4-Element, N-Channel and P-Channel, Sil | |
VQ7254J-1 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 20V, 3ohm, 4-Element, N-Channel and P-Channel, Sil | |
VQ7254J-2 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 20V, 3ohm, 4-Element, N-Channel and P-Channel, Sil | |
VQ7254N6 | SUPERTEX |
获取价格 |
N- and P-Channel Quad Power MOSFET Arrays | |
VQ7254P | ETC |
获取价格 |
N-and P-Channel Enhancement -Mode MOS Transistor Arrays |