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VQ3001P PDF预览

VQ3001P

更新时间: 2024-10-01 22:15:31
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管开关脉冲
页数 文件大小 规格书
6页 52K
描述
Dual N-/Dual P-Channel 30-V (D-S) MOSFETs

VQ3001P 技术参数

是否Rohs认证:不符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.06Is Samacsys:N
最大漏极电流 (Abs) (ID):0.6 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL AND P-CHANNEL最大功率耗散 (Abs):2 W
子类别:Other Transistors表面贴装:NO
Base Number Matches:1

VQ3001P 数据手册

 浏览型号VQ3001P的Datasheet PDF文件第2页浏览型号VQ3001P的Datasheet PDF文件第3页浏览型号VQ3001P的Datasheet PDF文件第4页浏览型号VQ3001P的Datasheet PDF文件第5页浏览型号VQ3001P的Datasheet PDF文件第6页 
VQ3001J/P  
Vishay Siliconix  
Dual N-/Dual P-Channel 30-V (D-S) MOSFETs  
PRODUCT SUMMARY  
V(BR)DSS Min (V) rDS(on) Max (W)  
VGS(th) (V)  
ID (A)  
N-Channel  
P-Channel  
30  
1 @ V = 12 V  
0.8 to 2.5  
–2 to –4.5  
0.85  
–0.6  
GS  
–30  
2 @ V = –12 V  
GS  
FEATURES  
BENEFITS  
APPLICATIONS  
D Low On-Resistance: 0.8/1.6 W  
D Low Threshold: 1.5/–3.1 V  
D Low Offset Voltage  
D Direct Logic-Level Interface: TTL/CMOS  
D Low-Voltage Operation  
D Drivers: Relays, Solenoids, Lamps, Hammers,  
Displays, Memories, Transistors, etc.  
D Low Input Capacitance: 38/60 pF D Easily Driven Without Buffer  
D Battery Operated Systems  
D Fast Switching Speed: 9/16 ns  
D Low Input and Output Leakage  
D High-Speed Circuits  
D Low Error Voltage  
D Solid-State Relays  
Dual-In-Line  
Device Marking  
Top View  
D
S
D
S
1
1
1
4
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
N
P
4
VQ3001J  
“S” fllxxyy  
G
G
4
NC  
NC  
VQ3001P  
“S” fllxxyy  
G
2
S
2
D
2
G
3
3
S
P
N
“S” = Siliconix Logo  
f = Factory Code  
ll = Lot Traceability  
xxyy = Date Code  
D
3
8
Top View  
Plastic: VQ3001J  
Sidebraze: VQ3001P  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Single  
N-Channel  
P-Channel  
Parameter  
Symbol  
Total Quad  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
"20  
"20  
0.85  
30  
"20  
"20  
–0.6  
–0.37  
–2  
DS  
VQ3001J  
VQ3001P  
V
V
GS  
T = 25_C  
A
Continuous Drain Current  
I
D
(T = 150_C)  
J
T = 100_C  
0.52  
A
A
a
Pulsed Drain Current  
I
3
DM  
T = 25_C  
1.3  
1.3  
2
A
Power Dissipation  
P
W
D
T = 100_C  
A
0.52  
0.52  
96.2  
0.8  
62.5  
Thermal Resistance, Junction-to-Ambient  
R
thJA  
96.2  
_C/W  
_C  
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 150  
–55 to 150  
stg  
Notes  
a. Pulse width limited by maximum junction temperature.  
Document Number: 70221  
S-04279—Rev. D, 16-Jul-01  
www.vishay.com  
11-1  

VQ3001P 替代型号

型号 品牌 替代类型 描述 数据表
VQ3001J VISHAY

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