VP1506NW

更新时间： 2024-10-28 22:36:47

品牌	Logo	应用领域
超科 - SUPERTEX		晶体小信号场效应晶体管开关
页数	文件大小	规格书
2页	29K
描述
P-Channel Enhancement-Mode Vertical DMOS FETs

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VP1506NW 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	DIE
包装说明：	UNCASED CHIP, X-XUUC-N	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.76
Is Samacsys：	N	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V	最大漏极电流 (ID)：	1.2 A
最大漏源导通电阻：	15 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	8 pF	JESD-30 代码：	X-XUUC-N
元件数量：	1	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	UNSPECIFIED
封装形状：	UNSPECIFIED	封装形式：	UNCASED CHIP
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	P-CHANNEL
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子形式：	NO LEAD
端子位置：	UPPER	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

VP1506NW 数据手册

VP1506

VP1509

P-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

I_D(ON)

BV_DGS

-60V

(max)

(min)

-0.5A

Die^†

8.0Ω

VP1506NW

VP1509NW

-90V

† MIL visual screening available.

Features

❏ Free from secondary breakdown

❏ Low power drive requirement

❏ Ease of paralleling

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

❏ Low C_ISSand fast switching speeds

❏ Excellent thermal stability

❏ Integral Source-Drain diode

❏ High input impedance and high gain

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

❏ Complementary N- and P-channel devices

Applications

❏ Motor controls

❏ Converters

❏ Amplifiers

❏ Switches

❏ Power supply circuits

❏ Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

Absolute Maximum Ratings

Drain-to-Source Voltage

BV_DSS

Drain-to-Gate Voltage

BV_DGS

± 20V

Gate-to-Source Voltage

Operating and Storage Temperature

-55°C to +150°C

300°C

Soldering Temperature*

* Distance of 1.6 mm from case for 10 seconds.

07/08/02

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

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与VP1506NW相关器件

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VP1509	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
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VP1509NW	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
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VP1550	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
VP1550NW	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
VP155-B22AA-00000	Carling Technologies	获取价格	Rocker Switch, Rocker Actuator,
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