VP1509NJ

更新时间： 2024-10-29 13:15:31

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
2页	334K
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数据手册

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VP1509NJ 数据手册

VP1504/VP1506/VP1509

P-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

I_D(ON)

BV_DGS

(max)

(min)

Die^†

-40V

8.0Ω

-0.5A

VP1504NW

-60V

-0.5A

VP1506NW

VP1509NW

-90V

† MIL visual screening available.

Features

Advanced DMOS Technology

❏

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

This enhancement-mode (normally-off) transistor utilizes a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces adevice with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

Low C_ISSand fast switching speeds

Excellent thermal stability

Integral Source-Drain diode

High input impedance and high gain

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Complementary N- and P-channel devices

Applications

❏

Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

BV_DSS

BV_DGS

±±0V

Operating and Storage Temperature

-55^OC to +150^OC

300^OC

Soldering Temperature*

* Distance of 1.6 mm from case for 10 seconds.

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