VP0350

更新时间： 2024-11-02 03:19:15

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	46K
描述
P-Channel Enhancement-Mode Vertical DMOS FETs

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VP0350 数据手册

VP0350

P-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

TO-220

BV_DSS

R_DS(ON)

I_D(ON)

(min)

BV_DGS

(max)

TO-3

Die^†

-500V

7.5Ω

-1A

VP0350N1

VP0350N5

VP0350ND

†

MIL visual screening available

High Reliability Devices

Advanced DMOS Technology

See pages 5-4 and 5-5 for MILITARY STANDARD Process

Flows and Ordering Information.

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Features

❏ Free from secondary breakdown

❏ Low power drive requirement

❏ Ease of paralleling

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

❏ Low C_ISSand fast switching speeds

❏ Excellent thermal stability

❏ Integral Source-Drain diode

❏ High input impedance and high gain

❏ Complementary N- and P-channel devices

Package Options

Applications

❏ Motor controls

❏ Converters

❏ Amplifiers

❏ Switches

❏ Power supply circuits

❏ Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

TO-3

Absolute Maximum Ratings

Drain-to-Source Voltage

Case: DRAIN

TO-220

TAB: DRAIN

BV_DSS

Drain-to-Gate Voltage

BV_DGS

± 20V

Gate-to-Source Voltage

Operating and Storage Temperature

-55°C to +150°C

300°C

Soldering Temperature*

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

05/19/03

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

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与VP0350相关器件

型号	品牌	获取价格	描述	数据表
VP0350N	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
VP0350N1	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
VP0350N2	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 500V, 1-Element, P-Channel, Silicon, Meta
VP0350N5	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
VP0350ND	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 500V, 1-Element, P-Channel, Silicon, Metal-oxide Sem
VP03650400J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
VP03650700J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
VP03652800J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
VP03653800J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
VP03658400J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block,

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