5秒后页面跳转
VP04658700J0G PDF预览

VP04658700J0G

更新时间: 2024-02-11 01:19:01
品牌 Logo 应用领域
安费诺 - AMPHENOL 端子和端子排
页数 文件大小 规格书
2页 235K
描述
Barrier Strip Terminal Block,

VP04658700J0G 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8536.69.40.40Factory Lead Time:25 weeks 5 days
风险等级:5.73端子和端子排类型:BARRIER STRIP TERMINAL BLOCK
Base Number Matches:1

VP04658700J0G 数据手册

 浏览型号VP04658700J0G的Datasheet PDF文件第2页 
~
VP xx 6 5 x 7 00J0 G  
C
US  
PDS: Rev :A  
STATUS:Released  
Printed: May 28, 2014  

与VP04658700J0G相关器件

型号 品牌 获取价格 描述 数据表
VP04658800J0G AMPHENOL

获取价格

Barrier Strip Terminal Block,
VP04659400J0G AMPHENOL

获取价格

Barrier Strip Terminal Block
VP04659500J0G AMPHENOL

获取价格

Barrier Strip Terminal Block
VP04850700J0G AMPHENOL

获取价格

Barrier Strip Terminal Block
VP04852700J0G AMPHENOL

获取价格

Barrier Strip Terminal Block
VP04854400J0G AMPHENOL

获取价格

Barrier Strip Terminal Block
VP0535 SUPERTEX

获取价格

P-Channel Enhancement-Mode Vertical DMOS FETs
VP0535N2 ETC

获取价格

TRANSISTOR | MOSFET | P-CHANNEL | 350V V(BR)DSS | 200MA I(D) | TO-39
VP0535N3 ETC

获取价格

P-CHANNEL ENHANCEMENT MODE D MOS FETS
VP0535N3P002 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.1A I(D), 350V, 1-Element, P-Channel, Silicon, Meta