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VP0350N5

更新时间： 2024-11-02 03:19:15
品牌 Logo 应用领域
超科 - SUPERTEX /
页数 文件大小 规格书
4页 46K
描述
P-Channel Enhancement-Mode Vertical DMOS FETs

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中文翻译

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VP0350N5 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SFM包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.92
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：500 V最大漏极电流 (Abs) (ID)：1 A
最大漏极电流 (ID)：1 A最大漏源导通电阻：7.5 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：50 pF
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
功耗环境最大值：50 W最大功率耗散 (Abs)：50 W
最大脉冲漏极电流 (IDM)：3 A认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
最大关闭时间（toff）：130 ns最大开启时间（吨）：60 ns

VP0350N5 数据手册

 浏览型号VP0350N5的Datasheet PDF文件第2页浏览型号VP0350N5的Datasheet PDF文件第3页浏览型号VP0350N5的Datasheet PDF文件第4页 
VP0350  
P-Channel Enhancement-Mode  
Vertical DMOS FETs  
Ordering Information  
Order Number / Package  
TO-220  
BVDSS  
/
RDS(ON)  
ID(ON)  
(min)  
BVDGS  
(max)  
TO-3  
Die†  
-500V  
7.5Ω  
-1A  
VP0350N1  
VP0350N5  
VP0350ND  
†
MIL visual screening available  
High Reliability Devices  
Advanced DMOS Technology  
See pages 5-4 and 5-5 for MILITARY STANDARD Process  
Flows and Ordering Information.  
These enhancement-mode (normally-off) transistors utilize a  
vertical DMOS structure and Supertex’s well-proven silicon-gate  
manufacturing process. This combination produces devices with  
the power handling capabilities of bipolar transistors and with the  
high input impedance and positive temperature coefficient inher-  
ent in MOS devices. Characteristic of all MOS structures, these  
devices are free from thermal runaway and thermally-induced  
secondary breakdown.  
Features  
❏ Free from secondary breakdown  
❏ Low power drive requirement  
❏ Ease of paralleling  
Supertex’s vertical DMOS FETs are ideally suited to a wide range  
of switching and amplifying applications where high breakdown  
voltage, high input impedance, low input capacitance, and fast  
switching speeds are desired.  
❏ Low CISS and fast switching speeds  
❏ Excellent thermal stability  
❏ Integral Source-Drain diode  
❏ High input impedance and high gain  
❏ Complementary N- and P-channel devices  
Package Options  
Applications  
❏ Motor controls  
❏ Converters  
❏ Amplifiers  
❏ Switches  
❏ Power supply circuits  
❏ Drivers (relays, hammers, solenoids, lamps, memories,  
displays, bipolar transistors, etc.)  
S
G
G
D
TO-3  
S
Absolute Maximum Ratings  
Drain-to-Source Voltage  
Case: DRAIN  
TO-220  
TAB: DRAIN  
BVDSS  
Drain-to-Gate Voltage  
BVDGS  
± 20V  
Gate-to-Source Voltage  
Operating and Storage Temperature  
-55°C to +150°C  
300°C  
Soldering Temperature*  
Note: See Package Outline section for dimensions.  
* Distance of 1.6 mm from case for 10 seconds.  
05/19/03  
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability  
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to  
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the  
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.  
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