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VI30120SG-E3/4W PDF预览

VI30120SG-E3/4W

更新时间: 2024-11-24 05:54:55
品牌 Logo 应用领域
威世 - VISHAY 高压
页数 文件大小 规格书
5页 168K
描述
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

VI30120SG-E3/4W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-262AA
包装说明:R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.69
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.9 VJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
最大非重复峰值正向电流:220 A元件数量:1
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:120 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

VI30120SG-E3/4W 数据手册

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New Product  
V30120SG, VF30120SG, VB30120SG & VI30120SG  
Vishay General Semiconductor  
High-Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low V = 0.47 V at I = 5 A  
F
F
FEATURES  
TMBS®  
• Trench MOS Schottky technology  
TO-220AB  
ITO-220AB  
• Low forward voltage drop, low power  
losses  
• High efficiency operation  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
3
3
2
2
1
1
V30120SG  
TO-263AB  
VF30120SG  
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB  
and TO-262AA package)  
PIN 1  
PIN 3  
PIN 1  
PIN 2  
CASE  
PIN 2  
PIN 3  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TO-262AA  
K
K
TYPICAL APPLICATIONS  
For use in high frequency inverters, switching power  
supplies, freewheeling diodes, OR-ing diode, dc-to-dc  
converters and reverse battery protection.  
A
3
NC  
2
1
VB30120SG  
VI30120SG  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB and  
PIN 1  
PIN 3  
NC  
A
K
PIN 2  
K
HEATSINK  
TO-262AA  
Epoxy meets UL 94V-0 flammability rating  
PRIMARY CHARACTERISTICS  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
IF(AV)  
VRRM  
IFSM  
30 A  
120 V  
220 A  
VF at IF = 30 A  
TJ max.  
0.81 V  
150 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL V30120SG VF30120SG VB30120SG VI30120SG  
UNIT  
V
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (Fig. 1)  
VRRM  
IF(AV)  
120  
30  
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
220  
A
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
VAC  
1500  
V
Operating junction and storage temperature range  
TJ, TSTG  
- 40 to + 150  
°C  
Document Number: 89011  
Revision: 19-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

VI30120SG-E3/4W 替代型号

型号 品牌 替代类型 描述 数据表
V30120SG-E3/4W VISHAY

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High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

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