New Product
V30200C, VB30200C & VI30200C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V = 0.526 V at I = 5 A
F
F
FEATURES
• Trench MOS Schottky technology
TMBS®
TO-220AB
• Low forward voltage drop, low power
losses
• High efficiency operation
• Low thermal resistance
3
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
2
1
V30200C
• Solder dip 260 °C, 40 s (for TO-220AB and
TO-262AA package)
PIN 1
PIN 3
PIN 2
CASE
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TO-263AB
TO-262AA
K
K
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
2
3
1
2
1
VB30200C
VI30200C
PIN 1
PIN 2
K
PIN 1
PIN 2
K
MECHANICAL DATA
HEATSINK
PIN 3
Case: TO-220AB, TO-263AB and TO-262AA
Epoxy meets UL 94V-0 flammability rating
PRIMARY CHARACTERISTICS
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
IF(AV)
2 x 15 A
VRRM
200 V
250 A
IFSM
VF at IF = 15 A
TJ max.
0.648 V
150 °C
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
V30200C
VB30200C
VI30200C
UNIT
Maximum repetitive peak reverse voltage
VRRM
200
V
Maximum average forward rectified current
(Fig. 1)
per device
per diode
30
15
IF(AV)
A
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load per diode
IFSM
250
Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C
Peak repetitive reverse current at tp = 2 µs, 1 kHz per diode
Voltage rate of change (rated VR)
EAS
IRRM
100
1.0
mJ
A
dV/dt
10 000
V/µs
°C
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
Document Number: 89014
Revision: 31-Jul-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1