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VI30120SHM3/4W PDF预览

VI30120SHM3/4W

更新时间: 2024-11-09 20:10:11
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线二极管
页数 文件大小 规格书
6页 168K
描述
DIODE 30 A, 120 V, SILICON, RECTIFIER DIODE, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

VI30120SHM3/4W 技术参数

生命周期:Obsolete零件包装代码:TO-262AA
包装说明:R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.41
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.82 VJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3最大非重复峰值正向电流:300 A
元件数量:1相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:120 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VI30120SHM3/4W 数据手册

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V30120S, VF30120S, VB30120S, VI30120S  
www.vishay.com  
Vishay General Semiconductor  
High Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low VF = 0.43 V at IF = 5 A  
FEATURES  
• Trench MOS Schottky technology  
TMBS®  
TO-220AB  
ITO-220AB  
• Low forward voltage drop, low power losses  
• High efficiency operation  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 245 °C (for TO-263AB  
package)  
• Solder bath temperature 275 °C maximum, 10 s, per  
JESD 22-B106  
(for TO-220AB, ITO-220AB, and TO-262AA package)  
3
3
2
2
1
1
V30120S  
VF30120S  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PIN 1  
PIN 3  
PIN 1  
PIN 2  
CASE  
PIN 2  
PIN 3  
TYPICAL APPLICATIONS  
For use in high frequency converters, switching power  
supplies, freewheeling diodes, OR-ing diode, DC/DC  
converters and reverse battery protection.  
TO-262AA  
TO-263AB  
K
K
MECHANICAL DATA  
Case:  
TO-262AA  
TO-220AB,  
ITO-220AB,  
TO-263AB  
and  
A
3
NC  
VB30120S  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-M3 halogen-free, RoHS-compliant, and  
commercial grade  
2
-
1
VI30120S  
PIN 1  
PIN 3  
NC  
A
K
PIN 2  
K
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
HEATSINK  
M3 suffix meets JESD 201 class 1A whisker test  
(for TO-220AB, ITO-220AB and TO-262AA package) and  
class 2 whisker test (for TO-263AB package)  
PRIMARY CHARACTERISTICS  
IF(AV)  
30 A  
120 V  
300 A  
0.74 V  
150 °C  
Polarity: As marked  
VRRM  
Mounting Torque: 10 in-lbs maximum  
IFSM  
VF at IF = 30 A  
TJ max.  
TO-220AB, ITO-220AB,  
TO-263AB, TO-262AA  
Package  
Diode variations  
Single  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL V30120S VF30120S VB30120S VI30120S UNIT  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (fig. 1)  
VRRM  
IF(AV)  
120  
30  
V
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
300  
A
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min  
Operating junction and storage temperature range  
VAC  
1500  
V
TJ, TSTG  
-40 to +150  
°C  
Revision: 15-Nov-17  
Document Number: 89152  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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