型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VI20100C-M3/4W | VISHAY |
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DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PL | |
VI20100S | VISHAY |
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High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A | |
VI20100S-E3/4W | VISHAY |
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High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A | |
VI20100SG | VISHAY |
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High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A | |
VI20100SG-E3/4W | VISHAY |
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High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A | |
VI20100SG-E3-4W | VISHAY |
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High-Voltage Trench MOS Barrier Schottky Rectifier | |
VI20100SHM3/4W | VISHAY |
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, TO-262AA, HALOGE | |
VI-201-2 | VARITRONIX |
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VI-201-DP | |
VI20120C | VISHAY |
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Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
VI20120C-E3/4W | VISHAY |
获取价格 |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |