Datasheet > VI20120S

VI20120S

更新时间： 2024-10-15 06:02:59

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	166K
描述
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

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VI20120S 数据手册

New Product

V20120S, VF20120S, VB20120S & VI20120S

Vishay General Semiconductor

High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V = 0.50 V at I = 5 A

FEATURES

• Trench MOS Schottky technology

TMBS^®

TO-220AB

ITO-220AB

• Low forward voltage drop, low power

losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB

and TO-262AA package)

V20120S

VF20120S

PIN 1

PIN 3

PIN 1

PIN 2

CASE

PIN 2

PIN 3

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TO-263AB

TO-262AA

TYPICAL APPLICATIONS

For use in high frequency inverters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

VB20120S

VI20120S

MECHANICAL DATA

PIN 1

PIN 3

PIN 2

Case: TO-220AB, ITO-220AB, TO-263AB and

HEATSINK

TO-262AA

Epoxy meets UL 94V-0 flammability rating

PRIMARY CHARACTERISTICS

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

I_F(AV)

V_RRM

I_FSM

20 A

120 V

200 A

V_Fat I_F= 20 A

T_Jmax.

0.73 V

150 °C

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V20120S

VF20120S VB20120S

VI20120S

UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig. 1)

V_RRM

120

I_F(AV)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

200

Isolation voltage (ITO-220AB only)

From terminal to heatsink t = 1 min

V_AC

1500

Operating junction ans storage temperature range

T_J, T_STG

- 40 to + 150

°C

Document Number: 88993

Revision: 19-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

中文翻译

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与VI20120S相关器件

型号	品牌	获取价格	描述	数据表
VI20120S-E3/4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
VI20120SG	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
VI20120SG-E3/4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
VI20120SG-E3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
VI20120SGHM3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
VI20120SG-M3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
VI20120SHM3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
VI20120S-M3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
VI-201-29	VICOR	获取价格	VI-200™ & VI-J00™ DC-DC 转换器
VI20150C	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

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