Datasheet > VF20150S_15

VF20150S_15

更新时间： 2024-11-25 01:26:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	77K
描述
High-Voltage Trench MOS Barrier Schottky Rectifier

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数据手册

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VF20150S_15 数据手册

VF20150S

Vishay General Semiconductor

www.vishay.com

High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.55 V at I_F= 5 A

FEATURES

TMBS^®

ITO-220AB

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder bath temperature 275 °C max. 10 s,

per JESD 22-B106

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

VF20150S

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

PIN 1

PIN 2

power supplies, freewheeling diodes, OR-ing diode, and

PIN 3

reverse battery protection.

MECHANICAL DATA

Case: ITO-220AB

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

20 A

150 V

V_RRM

Base P/N-M3

- halogen-free, RoHS-compliant, and

commercial grade

I_FSM

160 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

V_Fat I_F= 20 A

T_Jmax.

0.75 V

150 °C

Package

Diode variation

ITO-220AB

Single die

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VF20150S

150

UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

V_RRM

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

160

Voltage rate of change (rated V_R)

dV/dt

V_AC

10 000

1500

V/μs

Isolation voltage from termal to heatsink t = 1 min

Operating junction and storage temperature range

T_J, T_STG

-55 to +150

°C

Revision: 28-Oct-13

Document Number: 89268

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与VF20150S_15相关器件

型号	品牌	获取价格	描述	数据表
VF20150S-E3/4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A
VF20150SG	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A
VF20150SG_10	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
VF20150SG_15	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
VF20150SG-E3/4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A
VF20150SG-M3/4W	VISHAY	获取价格	DIODE 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PL
VF20150SG-M3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
VF20200C	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A
VF20200C-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A
VF20200C-E3-4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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