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VF20200G-E3/4W PDF预览

VF20200G-E3/4W

更新时间: 2024-11-05 20:05:55
品牌 Logo 应用领域
威世 - VISHAY 局域网功效瞄准线二极管
页数 文件大小 规格书
5页 150K
描述
DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode

VF20200G-E3/4W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:1.24
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.8 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:110 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:200 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

VF20200G-E3/4W 数据手册

 浏览型号VF20200G-E3/4W的Datasheet PDF文件第2页浏览型号VF20200G-E3/4W的Datasheet PDF文件第3页浏览型号VF20200G-E3/4W的Datasheet PDF文件第4页浏览型号VF20200G-E3/4W的Datasheet PDF文件第5页 
V20200G, VF20200G, VB20200G, VI20200G  
www.vishay.com  
Vishay General Semiconductor  
Dual High Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low VF = 0.62 V at IF = 5 A  
FEATURES  
TMBS®  
• Trench MOS Schottky technology  
TO-220AB  
ITO-220AB  
• Low forward voltage drop, low power losses  
• High efficiency operation  
• Low thermal resistance  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
3
• Solder bath temperature 275 °C maximum, 10 s, per JESD  
22-B106 (for TO-220AB, ITO-220AB and TO-262AA  
package)  
3
2
2
1
1
V20200G  
VF20200G  
TO-262AA  
PIN 1  
PIN 3  
PIN 1  
PIN 3  
PIN 2  
CASE  
PIN 2  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TO-263AB  
TYPICAL APPLICATIONS  
For use in high frequency converters, switching power  
supplies, freewheeling diodes, OR-ing diode, DC/DC  
converters and reverse battery protection.  
K
K
MECHANICAL DATA  
2
3
Case:  
TO-262AA  
TO-220AB,  
ITO-220AB,  
TO-263AB  
and  
1
2
1
VB20200G  
VI20200G  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
PIN 1  
PIN 2  
PIN 1  
PIN 3  
K
PIN 2  
K
HEATSINK  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 10 A  
200 V  
Polarity: As marked  
VRRM  
Mounting Torque: 10 in-lbs max.  
IFSM  
110 A  
VF at IF = 10 A  
TJ max.  
0.71 V  
150 °C  
TO-220AB, ITO-220AB,  
TO-263AB, TO-262AA  
Package  
Diode variations  
Common cathode  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL V20200G VF20200G VB20200G VI20200G  
UNIT  
Max. repetitive peak reverse voltage  
VRRM  
IF(AV)  
IFSM  
EAS  
200  
20  
V
per device  
per diode  
Max. average forward rectified current (fig. 1)  
A
10  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
110  
60  
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH  
per diode  
mJ  
Peak repetitive reverse current at tp = 2 μs, 1 kHz,   
IRRM  
dV/dt  
VAC  
0.5  
10 000  
A
V/μs  
V
TJ = 38 °C 2 °C per diode  
Voltage rate of change (rated VR)  
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
1500  
Operating junction and storage temperature range  
TJ, TSTG  
- 40 to + 150  
°C  
Revision: 16-Aug-13  
Document Number: 89117  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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