VF20M120C-M3
Vishay General Semiconductor
www.vishay.com
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.55 V at IF = 5 A
FEATURES
TMBS®
ITO-220AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
3
2
1
VF20M120C
TYPICAL APPLICATIONS
PIN 1
PIN 2
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PIN 3
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
120 V
VRRM
Base P/N-M3
- halogen-free, RoHS-compliant, and
IFSM
120 A
commercial grade
VF at IF = 10 A
TJ max.
Package
0.64 V
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
150 °C
ITO-220AB
Diode variation
Dual common cathode
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VF20M120C
UNIT
Maximum repetitive peak reverse voltage
VRRM
120
20
V
per device
per diode
Maximum average forward rectified current
(fig. 1)
IF(AV)
A
10
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
120
A
Voltage rating of change (rated VR)
dV/dt
VAC
10 000
1500
V/μs
V
Isolation voltage from termal to heatsink t = 1 min
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
°C
Revision: 02-Dec-13
Document Number: 89469
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000