型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VBT10200C | VISHAY |
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Trench MOS Barrier Schottky Rectifier | |
VBT10200C-E3 | VISHAY |
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Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A | |
VBT10200C-E3/4W | VISHAY |
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DIODE 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R | |
VBT10200C-E3/8W | VISHAY |
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DIODE 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R | |
VBT10200C-E3-4W | VISHAY |
获取价格 |
Trench MOS Barrier Schottky Rectifier | |
VBT10200C-E3-8W | VISHAY |
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Trench MOS Barrier Schottky Rectifier | |
VBT10202C-M3/4W | VISHAY |
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Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-263AB, | |
VBT10202C-M3/8W | VISHAY |
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Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-263AB, | |
VBT1045BP | VISHAY |
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Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection | |
VBT1045BP_15 | VISHAY |
获取价格 |
Trench MOS Barrier Schottky Rectifier |