Datasheet > VBT1045BP_15

VBT1045BP_15

更新时间： 2024-11-07 01:25:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	85K
描述
Trench MOS Barrier Schottky Rectifier

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中文翻译

获取价格

数据手册

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VBT1045BP_15 数据手册

VBT1045BP

Vishay General Semiconductor

www.vishay.com

Trench MOS Barrier Schottky Rectifier

for PV Solar Cell Bypass Protection

Ultra Low V_F= 0.41 V at I_F= 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

TO-263AB

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C

• Compliant to RoHS Directive 2011/65/EU

TYPICAL APPLICATIONS

For use in solar cell junction box as a bypass diode for

protection, using DC forward current without reverse bias.

VBT1045BP

PIN 1

PIN 2

HEATSINK

MECHANICAL DATA

Case: TO-263AB

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

PRIMARY CHARACTERISTCS

I_F(DC)

10 A

45 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

V_RRM

I_FSM

100 A

0.52 V

150 °C

200 °C

V_Fat I_F= 10 A

Polarity: As marked

_OPmax. (AC mode)

Mounting Torque: 10 in-lbs maximum

T_Jmax. (DC forward current)

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VBT1045BP

UNIT

Maximum repetitive peak reverse voltage

Maximum DC forward bypassing current (fig. 1)

V_RRM

(1)

I_F(DC)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

T_OP

100

- 40 to + 150

200

Operating junction temperature range (AC mode)

°C

Junction temperature in DC forward current

without reverse bias, t  1 h

(2)

T_J

Notes

(1)

With heatsink

(2)

Meets the requirements of IEC 61215 ed.2 bypass diode thermal test

Revision: 23-Feb-12

Document Number: 89452

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与VBT1045BP_15相关器件

型号	品牌	获取价格	描述	数据表
VBT1045BP-E3	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VBT1045BP-E3/4W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VBT1045BP-E3/8W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VBT1045BP-E3_15	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VBT1045BP-M3	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VBT1045BP-M3/4W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, TO-263AB, HALOGEN
VBT1045BP-M3/8W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, TO-263AB, HALOGEN
VBT1045C	VISHAY	获取价格	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VBT1045CBP	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier Rectifier
VBT1045CBP_1205	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier

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