Datasheet > VBT1045CBP-M3_15

VBT1045CBP-M3_15

更新时间： 2024-09-17 01:25:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	85K
描述
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

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VBT1045CBP-M3_15 数据手册

VBT1045CBP-M3

Vishay General Semiconductor

www.vishay.com

Trench MOS Barrier Schottky Rectifier

for PV Solar Cell Bypass Protection

Ultra Low V_F= 0.34 V at I_F= 2.5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

TO-263AB

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 245 °C

• T_J200 °C max. in solar bypass mode application

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

VBT1045CBP

PIN 1

PIN 2

TYPICAL APPLICATIONS

For use in solar cell junction box as a bypass diode for

protection, using DC forward current without reverse bias.

HEATSINK

PRIMARY CHARACTERISTICS

MECHANICAL DATA

Case: TO-263AB

Molding compound meets UL 94 V-0 flammability rating

Package

TO-263AB

2 x 5.0 A

45 V

I_F(AV)

Base P/N-M3

- halogen-free, RoHS-compliant, and

V_RRM

commercial grade

I_FSM

100 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

V_Fat I_F= 5.0 A

0.41 V

_OPmax. (AC mode)

150 °C

T_Jmax. (DC forward current)

Diode variation

200 °C

Polarity: As marked

Common cathode

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VBT1045CBP

UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

(1)

Maximum average forward rectified current (fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

100

Operating junction and storage temperature range (AC mode)

T_OP, T_STG

- 40 to + 150

°C

Junction temperature in DC forward current

without reverse bias, t  1 h

(2)

T_J

 200

Notes

(1)

With heatsink

(2)

Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test

Revision: 30-Apr-13

Document Number: 87960

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与VBT1045CBP-M3_15相关器件

型号	品牌	获取价格	描述	数据表
VBT1045C-E3	VISHAY	获取价格	Trench MOS Schottky technology
VBT1045C-E3/4W	VISHAY	获取价格	DIODE 5 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-2, Re
VBT1045C-E3/8W	VISHAY	获取价格	DIODE 5 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-2, Re
VBT1045C-E3_15	VISHAY	获取价格	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VBT1045C-M3	VISHAY	获取价格	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A
VBT1045C-M3/4W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 45V V(RRM), Silicon, TO-263AB, HALOGEN
VBT1045C-M3/8W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 45V V(RRM), Silicon, TO-263AB, HALOGEN
VBT1045C-M3_15	VISHAY	获取价格	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VBT1060C-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VBT1060C-E3/8W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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