Datasheet > VBT10200C-E3-8W

VBT10200C-E3-8W

更新时间： 2024-11-09 08:14:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	145K
描述
Trench MOS Barrier Schottky Rectifier

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中文翻译

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VBT10200C-E3-8W 数据手册

New Product

VT10200C, VFT10200C, VBT10200C, VIT10200C

Vishay General Semiconductor

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.58 V at I_F= 2.5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

TO-220AB

ITO-220AB

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder dip 275 °C max. 10 s, per JESD 22-B106 (for

TO-220AB, ITO-220AB and TO-262AA package)

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

VT10200C

VFT10200C

PIN 1

PIN 2

CASE

PIN 2

PIN 3

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

TO-263AB

TO-262AA

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

VBT10200C

VIT10200C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

PIN 1

PIN 2

PIN 1

PIN 2

HEATSINK

PIN 3

Polarity: As marked

PRIMARY CHARACTERISTICS

Mounting Torque: 10 in-lbs maximum

I_F(AV)

2 x 5.0 A

200 V

V_RRM

I_FSM

80 A

V_Fat I_F= 5.0 A

T_Jmax.

0.65 V

150 °C

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL VT10200C VFT10200C VBT10200C VIT10200C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

200

10.0

5.0

per device

per diode

Maximum average forward rectified current

(fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

E_AS

Non-repetitive avalanche energy

at T_J= 25 °C, L = 60 mH per diode

Peak repetitive reverse current

at t_p= 2 μs, 1 kHz, T_J= 38 °C 2 °C per diode

I_RRM

dV/dt

V_AC

0.5

10 000

V/μs

Voltage rate of change (rated V_R)

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

1500

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

°C

Document Number: 89177

Revision: 09-Dec-09

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

12 3 4 5

中文翻译

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与VBT10200C-E3-8W相关器件

型号	品牌	获取价格	描述	数据表
VBT10202C-M3/4W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-263AB,
VBT10202C-M3/8W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-263AB,
VBT1045BP	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VBT1045BP_15	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VBT1045BP-E3	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VBT1045BP-E3/4W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VBT1045BP-E3/8W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VBT1045BP-E3_15	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VBT1045BP-M3	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VBT1045BP-M3/4W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, TO-263AB, HALOGEN

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