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VBT10200C-E3-8W PDF预览

VBT10200C-E3-8W

更新时间: 2024-11-06 08:14:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 145K
描述
Trench MOS Barrier Schottky Rectifier

VBT10200C-E3-8W 数据手册

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New Product  
VT10200C, VFT10200C, VBT10200C, VIT10200C  
Vishay General Semiconductor  
Trench MOS Barrier Schottky Rectifier  
Ultra Low VF = 0.58 V at IF = 2.5 A  
FEATURES  
TMBS®  
• Trench MOS Schottky technology  
• Low forward voltage drop, low power losses  
• High efficiency operation  
TO-220AB  
ITO-220AB  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
• Solder dip 275 °C max. 10 s, per JESD 22-B106 (for  
TO-220AB, ITO-220AB and TO-262AA package)  
3
3
2
2
1
1
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
VT10200C  
VFT10200C  
PIN 1  
PIN 1  
PIN 2  
CASE  
PIN 2  
PIN 3  
PIN 3  
TYPICAL APPLICATIONS  
For use in high frequency converters, switching power  
supplies, freewheeling diodes, OR-ing diode, dc-to-dc  
converters and reverse battery protection.  
TO-263AB  
TO-262AA  
K
K
MECHANICAL DATA  
2
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
3
1
2
1
VBT10200C  
VIT10200C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
PIN 1  
PIN 2  
K
PIN 1  
PIN 2  
K
HEATSINK  
PIN 3  
Polarity: As marked  
PRIMARY CHARACTERISTICS  
Mounting Torque: 10 in-lbs maximum  
IF(AV)  
2 x 5.0 A  
200 V  
VRRM  
IFSM  
80 A  
VF at IF = 5.0 A  
TJ max.  
0.65 V  
150 °C  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL VT10200C VFT10200C VBT10200C VIT10200C  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
200  
10.0  
5.0  
V
per device  
per diode  
Maximum average forward rectified current  
(fig. 1)  
IF(AV)  
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
EAS  
80  
30  
A
Non-repetitive avalanche energy  
at TJ = 25 °C, L = 60 mH per diode  
mJ  
Peak repetitive reverse current  
at tp = 2 μs, 1 kHz, TJ = 38 °C 2 °C per diode  
IRRM  
dV/dt  
VAC  
0.5  
10 000  
A
V/μs  
V
Voltage rate of change (rated VR)  
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
1500  
Operating junction and storage temperature range  
TJ, TSTG  
- 40 to + 150  
°C  
Document Number: 89177  
Revision: 09-Dec-09  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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