Datasheet > VB60100C-M3

VB60100C-M3

更新时间： 2024-11-14 01:24:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	88K
描述
Low forward voltage drop, low power losses

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VB60100C-M3 数据手册

VB60100C-M3

Vishay General Semiconductor

www.vishay.com

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.36 V at I_F= 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

TO-263AB

• High efficiency operation

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C

• Material categorization: For definitions of

compliance please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

VB60100C

PIN 1

PIN 2

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters, and reverse battery protection.

HEATSINK

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Package

TO-263AB

2 x 30 A

100 V

Case: TO-263AB

I_F(AV)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3

V_RRM

- halogen-free, RoHS-compliant, and

commercial grade

I_FSM

320 A

V_Fat I_F= 30 A

T_Jmax.

0.66 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

150 °C

M3 suffix meets JESD 201 class 1A whisker test

Diode variation

Common cathode

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VB60100C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

100

per device

Maximum average forward rectified current (fig. 1)

per diode

I_F(AV)

I_FSM

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

320

Voltage rate of change (rated VR)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

Revision: 15-May-13

Document Number: 87988

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与VB60100C-M3相关器件

型号	品牌	获取价格	描述	数据表
VB60100C-M3/4W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, TO-263AB, HALOGE
VB60100C-M3/8W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, TO-263AB, HALOGE
VB60100C-M3_15	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB60120C-E3/8W	VISHAY	获取价格	DIODE 30 A, 120 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3,
VB60120C-E3-4W	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB60120C-E3-8W	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB60170G	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB60170G-E3	VISHAY	获取价格	Trench MOS Schottky technology
VB60170G-E3/4W	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VB60170G-E3_15	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier

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