Datasheet > VB60100C-M3_15

VB60100C-M3_15

更新时间： 2024-09-26 01:25:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	78K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VB60100C-M3_15 数据手册

VB60100C-M3

Vishay General Semiconductor

www.vishay.com

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.36 V at I_F= 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

TO-263AB

• High efficiency operation

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C

• Material categorization: For definitions of

compliance please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

VB60100C

PIN 1

PIN 2

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters, and reverse battery protection.

HEATSINK

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Package

TO-263AB

2 x 30 A

100 V

Case: TO-263AB

I_F(AV)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3

V_RRM

- halogen-free, RoHS-compliant, and

commercial grade

I_FSM

320 A

V_Fat I_F= 30 A

T_Jmax.

0.66 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

150 °C

M3 suffix meets JESD 201 class 1A whisker test

Diode variation

Common cathode

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VB60100C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

100

per device

Maximum average forward rectified current (fig. 1)

per diode

I_F(AV)

I_FSM

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

320

Voltage rate of change (rated VR)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

Revision: 15-May-13

Document Number: 87988

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

中文翻译

下载PDF

与VB60100C-M3_15相关器件

型号	品牌	获取价格	描述	数据表
VB60120C-E3/8W	VISHAY	获取价格	DIODE 30 A, 120 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3,
VB60120C-E3-4W	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB60120C-E3-8W	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB60170G	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB60170G-E3	VISHAY	获取价格	Trench MOS Schottky technology
VB60170G-E3/4W	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VB60170G-E3_15	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB-60MB	FUJITSU	获取价格	Power/Signal Relay, DPST, Momentary, 0.012A (Coil), 60VDC (Coil), 700mW (Coil), 5A (Contac
VB-60MBU	FUJITSU	获取价格	Power/Signal Relay, DPST, Momentary, 0.012A (Coil), 60VDC (Coil), 700mW (Coil), 5A (Contac
VB-60MBU-5	FUJITSU	获取价格	Power/Signal Relay, DPST, Momentary, 0.012A (Coil), 60VDC (Coil), 700mW (Coil), 5A (Contac

与VB60100C-M3_15相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

11
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

14
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

81
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

72

产品中心

服务支持

精选活动

关于我们

帮助中心

VB60100C-M3_15

VB60100C-M3_15 数据手册

与VB60100C-M3_15相关器件

与VB60100C-M3_15相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

VB60100C-M3_15

VB60100C-M3_15 数据手册

与VB60100C-M3_15相关器件

与VB60100C-M3_15相关文章

您还可以找

您在本页遇到什么问题？