Datasheet > V8PAM10SHM3/I

V8PAM10SHM3/I

更新时间： 2024-02-28 22:55:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	136K
描述
Rectifier Diode,

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中文翻译

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技术参数
数据手册

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V8PAM10SHM3/I 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	Base Number Matches：	1

V8PAM10SHM3/I 数据手册

V8PAM10S

Vishay General Semiconductor

www.vishay.com

Axis Title

100

10000

1000

100

1000

100

10000

Junction to ambient

T_J= 175 °C

T_J= 150 °C

1000

100

T_J= 100 °C

T_J= 125 °C

T_J= 25 °C

T_J= -40 °C

0.8

0.1

0.01

0.2

0.4

0.6

1.0

1.2

0.1

100

Instantaneous Forward Voltage (V)

t - Pulse Duration (s)

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 6 - Typical Transient Thermal Impedance

Axis Title

100

10000

1000

100

120

10000

Epoxy printed circuit

board FR4 copper

thickness = 70 µm

110

100

1000

100

T_J= 175 °C

T_J= 150 °C

T_J= 125 °C

0.1

T_J= 100 °C

0.01

0.001

0.0001

0.00001

T_J= 25 °C

T_J= -40 °C

S (cm²)

100

Percent of Rated Peak Reverse Voltage (%)

Copper Pad Areas (cm²)

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 7 - Thermal Resistance Junction to Ambient vs.

Copper Pad Areas

Axis Title

10 000

10000

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_p-p

1000

100

1000

100

0.1

100

Reverse Voltage (V)

Fig. 5 - Typical Junction Capacitance

Revision: 07-Apr-2020

Document Number: 87013

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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