Datasheet > V8PM10HM3/I

V8PM10HM3/I

更新时间： 2022-09-29 18:10:48

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	106K
描述
DIODE SCHOTTKY 100V 8A TO277A

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中文翻译

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数据手册

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V8PM10HM3/I 数据手册

V8PM10

Vishay General Semiconductor

www.vishay.com

High Current Density Surface-Mount

TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.50 V at I_F= 4 A

FEATURES

• Very low profile - typical height of 1.1 mm

eSMP Series

Available

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code; base P/NHM3

SMPC (TO-277A)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Anode 1

Anode 2

Cathode

TYPICAL APPLICATIONS

click logo to get started

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

DESIGN SUPPORT TOOLS

Models

Available

MECHANICAL DATA

Case: SMPC (TO-277A)

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

8 A

Base P/N-M3

halogen-free, RoHS-compliant, and

commercial grade

V_RRM

100 V

140 A

0.60 V

175 °C

Base P/NHM3

- halogen-free, RoHS-compliant and

I_FSM

AEC-Q101 qualified

V_Fat I_F= 8 A (125 °C)

T_Jmax.

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meet JESD 201 class 2 whisker test

Package

SMPC (TO-277A)

Single

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V8PM10

8M10

100

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F(AV)

Maximum DC forward current

(2)

I_F(AV)

3.7

Peak forward surge current 10 ms single half sine-wave 

superimposed on rated load

I_FSM

140

(3)

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

-55 to +175

°C

T_STG

Notes

(1)

(2)

(3)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended pad area

The heat generated must be less than the thermal conductivity from junction to ambient: dP_D/dT_J< 1/R_JA

Revision: 29-Jan-2019

Document Number: 87620

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V8PM10HM3/I相关器件

型号	品牌	获取价格	描述	数据表
V8PM10S	VISHAY	获取价格	High Current Density Surface Mount TMBSÂ® (Tr
V8PM10SHM3/H	VISHAY	获取价格	DIODE SCHOTTKY 100V 8A TO277A
V8PM10SHM3/I	VISHAY	获取价格	DIODE SCHOTTKY 100V 8A TO277A
V8PM10S-M3/H	VISHAY	获取价格	DIODE SCHOTTKY 100V 8A TO277A
V8PM10S-M3/I	VISHAY	获取价格	DIODE SCHOTTKY 100V 8A TO277A
V8PM12	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V8PM12HM3	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V8PM12-M3	VISHAY	获取价格	Trench MOS Schottky technology
V8PM12-M3_15	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V8PM15	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr

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