Datasheet > V8PM10SHM3/H

V8PM10SHM3/H

更新时间： 2022-09-29 12:46:28

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	101K
描述
DIODE SCHOTTKY 100V 8A TO277A

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V8PM10SHM3/H 数据手册

V8PM10S

Vishay General Semiconductor

www.vishay.com

High Current Density Surface Mount

TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.50 V at I_F= 4 A

FEATURES

eSMP Series

Available

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

SMPC (TO-277A)

• AEC-Q101 qualified available

Anode 1

Anode 2

- Automotive ordering code; base P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Cathode

click logo to get started

DESIGN SUPPORT TOOLS

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

Models

Available

PRIMARY CHARACTERISTICS

MECHANICAL DATA

I_F(AV)

8 A

Case: SMPC (TO-277A)

Molding compound meets UL 94 V-0 flammability rating

V_RRM

100 V

120 A

0.62 V

175 °C

I_FSM

Base P/N-M3

commercial grade

Base P/NHM3

AEC-Q101 qualified

halogen-free, RoHS-compliant, and

V_Fat I_F= 8 A (125 °C)

T_Jmax.

Package

SMPC (TO-277A)

Single

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

Circuit configuration

M3 and HM3 suffix meets JESD 201 class 2 whisker test

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V8PM10S

8M10S

100

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F(AV)

Maximum DC forward current

(2)

I_F(AV)

3.5

Peak forward surge current 10 ms single half sine-wave 

superimposed on rated load

I_FSM

120

Operating junction and storage temperature range

T_J⁽³⁾, T_STG

-40 to +175

°C

Notes

(1)

(2)

(3)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended pad area

The heat generated must be less than the thermal conductivity from junction to ambient: dP_D/dT_J< 1/R_JA

Revision: 30-Jan-2019

Document Number: 87532

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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