Datasheet > V8PM12-M3

V8PM12-M3

更新时间： 2022-02-26 13:11:46

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	100K
描述
Trench MOS Schottky technology

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数据手册

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V8PM12-M3 数据手册

V8PM12-M3, V8PM12HM3

Vishay General Semiconductor

www.vishay.com

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.53 V at I_F= 4 A

FEATURES

Available

• Very low profile - typical height of 1.1 mm

TMBS^®eSMP^®Series

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code; base P/NHM3

TO-277A (SMPC)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Anode 1

Anode 2

Cathode

MECHANICAL DATA

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

8.0 A

120 V

140 A

0.63 V

150 °C

Base P/N-M3

halogen-free, RoHS-compliant, and

V_RRM

commercial grade

I_FSM

Base P/NHM3

halogen-free, RoHS-compliant and

V_Fat I_F= 8.0 A

T_Jmax.

AEC-Q101 qualified

Base P/NHM3_X - halogen-free, RoHS-compliant and

AEC-Q101 qualified 

Package

TO-277A (SMPC)

Single die

Diode variation

(“_X” denotes revision code e.g. A, B,.....)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

TYPICAL APPLICATIONS

For use in low voltage high frequency DC/DC converters,

freewheeling, and polarity protection applications.

M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V8PM12

8M12

120

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F

8.0

3.6

Maximum DC forward current

(2)

I_F

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

140

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

°C

Notes

(1)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended copper pad area

(2)

Revision: 16-Dec-14

Document Number: 89936

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V8PM12-M3相关器件

型号	品牌	获取价格	描述	数据表
V8PM12-M3_15	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V8PM15	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V8PM153	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V8PM153HM3/H	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V8PM153HM3/I	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V8PM153-M3/H	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V8PM153-M3/I	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V8PM15HM3/H	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V8PM15HM3/I	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V8PM15-M3/H	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr

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