5秒后页面跳转
V8PAN50-M3 PDF预览

V8PAN50-M3

更新时间: 2022-02-26 12:52:45
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 135K
描述
Surface Mount Trench MOS Barrier Schottky Rectifier

V8PAN50-M3 数据手册

 浏览型号V8PAN50-M3的Datasheet PDF文件第2页浏览型号V8PAN50-M3的Datasheet PDF文件第3页浏览型号V8PAN50-M3的Datasheet PDF文件第4页浏览型号V8PAN50-M3的Datasheet PDF文件第5页 
V8PAN50-M3  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount Trench MOS Barrier Schottky Rectifier  
FEATURES  
• Very low profile - typical height of 0.95 mm  
• Ideal for automated placement  
TMBS® SMPATM  
• Trench MOS Schottky technology  
• Low power losses, high efficiency  
• Low forward voltage drop  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Top View  
Bottom View  
DO-221BC (SMPA)  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
8.0 A  
50 V  
Case: DO-221BC (SMPA)  
Molding compound meets UL 94 V-0 flammability rating  
VRRM  
IFSM  
VF at IF = 8.0 A (TA = 125 °C)  
TJ max.  
120 A  
0.41 V  
150 °C  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
commercial grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
M3 suffix meets JESD 201 class 2 whisker test  
Package  
DO-221BC (SMPA)  
Single die  
Diode variation  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V8PAN50  
8N5  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
VRRM  
50  
V
A
(1)  
IF  
8.0  
3.7  
Maximum DC forward current  
Maximum DC reverse voltage  
(2)  
IF  
VDC  
35  
V
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
120  
A
Operating junction and storage temperature range  
TJ, TSTG  
-40 to +150  
°C  
Notes  
(1)  
Units mounted on 3 cm x 3 cm Aluminum, 2 oz. PCB  
Free air, mounted on recommended copper pad area  
(2)  
Revision: 20-Oct-16  
Document Number: 87911  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与V8PAN50-M3相关器件

型号 品牌 描述 获取价格 数据表
V8PAN50-M3I VISHAY Surface Mount Trench MOS Barrier Schottky Rectifier

获取价格

V8PL63 VISHAY High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low

获取价格

V8PL6-M3 VISHAY Low forward voltage drop, low power losses

获取价格

V8PL6-M3_15 VISHAY High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

获取价格

V8PM10 VISHAY High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low

获取价格

V8PM10_15 VISHAY High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

获取价格