V8PAN50-M3
Vishay General Semiconductor
www.vishay.com
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Very low profile - typical height of 0.95 mm
• Ideal for automated placement
TMBS® SMPATM
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Top View
Bottom View
DO-221BC (SMPA)
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
8.0 A
50 V
Case: DO-221BC (SMPA)
Molding compound meets UL 94 V-0 flammability rating
VRRM
IFSM
VF at IF = 8.0 A (TA = 125 °C)
TJ max.
120 A
0.41 V
150 °C
Base P/N-M3
- halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 2 whisker test
Package
DO-221BC (SMPA)
Single die
Diode variation
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V8PAN50
8N5
UNIT
Device marking code
Maximum repetitive peak reverse voltage
VRRM
50
V
A
(1)
IF
8.0
3.7
Maximum DC forward current
Maximum DC reverse voltage
(2)
IF
VDC
35
V
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
120
A
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
°C
Notes
(1)
Units mounted on 3 cm x 3 cm Aluminum, 2 oz. PCB
Free air, mounted on recommended copper pad area
(2)
Revision: 20-Oct-16
Document Number: 87911
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000