Datasheet > V8PAN50-M3

V8PAN50-M3

更新时间： 2022-02-26 12:52:45

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	135K
描述
Surface Mount Trench MOS Barrier Schottky Rectifier

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V8PAN50-M3 数据手册

V8PAN50-M3

Vishay General Semiconductor

www.vishay.com

1000

100

Junction to Ambient

T_A= 150 °C

T_A= 125 °C

T_A

= 100 °C

T_A= 25 °C

0.1

0.01

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.1

100

Instantaneous Forward Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics

t -Pulse Duration (s)

Fig. 6 - Typical Transient Thermal Impedance

110

100

1000

Epoxy printed circiut

board FR4 copper

thickness = 70μm

100

T_A= 150 °C

T_A= 125 °C

T_A= 100 °C

0.1

0.01

T_A= 25 °C

S (cm²)

10 20 30 40 50 60 70 80 90 100

Copper Pad Areas (cm²)

Percent of Rated Peak Reverse Voltage (%)

Fig. 7 - Thermal Resistance Junction to Ambient vs.

Copper Pad Areas

Fig. 4 - Typical Reverse Leakage Characteristics

10 000

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mVp-p

1000

100

0.1

100

Reverse Voltage (V)

Fig. 5 - Typical Junction Capacitance

Revision: 20-Oct-16

Document Number: 87911

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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