Datasheet > V8PL6-M3_15

V8PL6-M3_15

更新时间： 2022-02-26 14:38:45

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	82K
描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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V8PL6-M3_15 数据手册

V8PL6-M3

Vishay General Semiconductor

www.vishay.com

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.34 V at I_F= 4 A

FEATURES

TMBS^®eSMP^®Series

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

TO-277A (SMPC)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Anode 1

Anode 2

Cathode

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

PRIMARY CHARACTERISTICS

I_F(AV)

8.0 A

60 V

V_RRM

MECHANICAL DATA

I_FSM

V_Fat I_F= 8.0 A (T_A= 125 °C)

T_Jmax.

140 A

0.42 V

150 °C

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3

- halogen-free, RoHS-compliant, and

Package

TO-277A (SMPC)

Single

commercial grade

Diode variation

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V8PL6-M3

UNIT

Device marking code

8L6

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F

8.0

4.3

Maximum average forward rectified current (fig. 1)

(2)

I_F

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

140

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

Notes

(1)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended copper pad area

(2)

Revision: 27-Oct-14

Document Number: 87725

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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