Datasheet > V8PL6-M3_15

V8PL6-M3_15

更新时间： 2024-01-09 22:35:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	82K
描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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V8PL6-M3_15 数据手册

V8PL6-M3

Vishay General Semiconductor

www.vishay.com

10 000

1000

100

T_J= 25°C

f = 1.0 MHz

V_sig= 50 mV_p-p

T_A= 150 °C

T_A= 125 °C

T_A= 100 °C

T_A= 25 °C

0.1

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

0.1

100

Instantaneous Forward Voltage (V)

Reverse Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 5 - Typical Junction Capacitance

100

Junction to Ambient

T_A= 150 °C

T_A= 125 °C

T_A= 100 °C

0.1

T_A= 25 °C

0.01

0.001

100

0.01

0.1

t - Pulse Duration (s)

Fig. 6 - Typical Transient Thermal Impedance

100

Percent of Rated Peak Reverse Voltage (%)

Fig. 4 - Typical Reverse Leakage Characteristics

Revision: 27-Oct-14

Document Number: 87725

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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