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V8P10HE3/86A PDF预览

V8P10HE3/86A

更新时间: 2024-02-13 16:54:44
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
5页 111K
描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

V8P10HE3/86A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.83
Is Samacsys:N配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.62 V
最大非重复峰值正向电流:150 A元件数量:1
最高工作温度:150 °C最大输出电流:8 A
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
Base Number Matches:1

V8P10HE3/86A 数据手册

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New Product  
V8P10  
Vishay General Semiconductor  
High Current Density Surface Mount  
Trench MOS Barrier Schottky Rectifier  
Ultra Low V = 0.466 V at I = 4 A  
F
F
FEATURES  
TMBS® eSMPTM Series  
• Very low profile - typical height of 1.1 mm  
• Ideal for automated placement  
K
• Trench MOS Schottky technology  
• Low forward voltage drop, low power  
losses  
1
2
• High efficiency operation  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
TO-277A (SMPC)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Anode 1  
Anode 2  
K
Cathode  
Halogen-free  
MECHANICAL DATA  
Case: TO-277A (SMPC)  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
8.0 A  
100 V  
150 A  
Molding compound meets UL 94V-0 flammability  
rating.  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, high reliability/  
automotive grade (AEC-Q101 qualified)  
Base P/N-M3 - halogen-free and RoHS compliant,  
commercial grade  
EAS  
100 mJ  
0.582 V  
150 °C  
V
F at IF = 8 A  
TJ max.  
Base P/NHM3 - halogen-free and RoHS compliant,  
high reliability/automotive grade (AEC-Q101 qualified)  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 and M3 suffix meets JESD 201 class 1A whisker  
test, HE3 and HM3 suffix meets JESD 201 class 2  
whisker test  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, dc-to-dc converters and polarity  
protection applications.  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
V8P10  
V810  
100  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (Fig. 1)  
VRRM  
IF(AV)  
V
A
8.0  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
150  
A
Non-repetitive avalanche energy  
at IAS = 2.0 A, TJ = 25 °C  
EAS  
J, TSTG  
100  
mJ  
°C  
Operating junction and storage temperature range  
T
- 40 to + 150  
Document Number: 89005  
Revision: 30-Jul-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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