Datasheet > V8P12HM3-86A

V8P12HM3-86A

更新时间： 2024-09-28 08:14:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	91K
描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

V8P12HM3-86A 数据手册

New Product

V8P12

Vishay General Semiconductor

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.53 V at I_F= 4 A

FEATURES

TMBS^®eSMP^®Series

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

TO-277A (SMPC)

• AEC-Q101 qualified

Anode 1

Anode 2

Cathode

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

PRIMARY CHARACTERISTICS

I_F(AV)

8.0 A

120 V

MECHANICAL DATA

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

V_RRM

I_FSM

140 A

Base P/N-M3

commercial grade

Base P/NHM3

automotive grade

halogen-free, RoHS compliant, and

E_AS

100 mJ

0.63 V

150 °C

V_Fat I_F= 8.0 A

T_Jmax.

- halogen-free, RoHS compliant, and

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters and polarity protection

applications.

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V8P12

V812

120

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

V_RRM

I_F(AV)

8.0

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

E_AS

140

100

Non-repetitive avalanche energy at I_AS= 2.0 A, T_J= 25 °C

Peak repetitive reverse current at t_p= 2 μs, 1 kHz,

T_J= 38 °C 2 °C

I_RRM

0.5

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

°C

Document Number: 89170

Revision: 19-Apr-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与V8P12HM3-86A相关器件

型号	品牌	获取价格	描述	数据表
V8P12HM3-87A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V8P12-M3/86A	VISHAY	获取价格	DIODE 8 A, 120 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, SMPC
V8P12-M3/87A	VISHAY	获取价格	DIODE 8 A, 120 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, SMPC
V8P12-M3-86A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V8P12-M3-87A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V8P15	VISHAY	获取价格	High Current Density Surface Mount TMBSÂ® (Tr
V8P15_15	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V8P15HM3/H	VISHAY	获取价格	High Current Density Surface Mount TMBSÂ® (Tr
V8P15HM3/I	VISHAY	获取价格	High Current Density Surface Mount TMBSÂ® (Tr
V8P15-M3/H	VISHAY	获取价格	High Current Density Surface Mount TMBSÂ® (Tr

与V8P12HM3-86A相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

22
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

18
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

20
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

31

产品中心

服务支持

精选活动

关于我们

帮助中心

V8P12HM3-86A

V8P12HM3-86A 数据手册

与V8P12HM3-86A相关器件

与V8P12HM3-86A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

V8P12HM3-86A

V8P12HM3-86A 数据手册

与V8P12HM3-86A相关器件

与V8P12HM3-86A相关文章

您还可以找

您在本页遇到什么问题？