Datasheet > V8P45HM3

V8P45HM3

更新时间： 2024-02-07 18:30:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	96K
描述
Low forward voltage drop, low power losses

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数据手册

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V8P45HM3 数据手册

V8P45-M3, V8P45HM3

Vishay General Semiconductor

www.vishay.com

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.34 V at I_F= 4 A

FEATURES

• Very low profile - typical height of 1.1 mm

TMBS^®eSMP^®Series

Available

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

TO-277A (SMPC)

• AEC-Q101 qualified available

- Automotive ordering code; base P/NHM3

Anode 1

Anode 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Cathode

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

PRIMARY CHARACTERISTICS

MECHANICAL DATA

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

8.0 A

45 V

V_RRM

Base P/N-M3

commercial grade

Base P/NHM3

AEC-Q101 qualified

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified 

halogen-free, RoHS-compliant, and

I_FSM

V_Fat I_F= 8.0 A (T_A= 125 °C)

T_Jmax.

140 A

0.41 V

150 °C

halogen-free, RoHS-compliant, and

Package

TO-277A (SMPC)

Single die

Diode variation

(“_X” denotes revision code e.g. A, B,.....)

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V8P45

UNIT

Device marking code

V845

Maximum repetitive peak reverse voltage

V_RRM

8.0

4.3

(1)

I_F

Maximum average forward rectified current (fig. 1)

(2)

I_F

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

140

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

°C

Notes

(1)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended copper pad area

(2)

Revision: 04-May-15

Document Number: 87710

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V8P45HM3相关器件

型号	品牌	获取价格	描述	数据表
V8P45HM3_A/H	VISHAY	获取价格	High Current Density Surface Mount TMBSÂ® (Tr
V8P45HM3_A/I	VISHAY	获取价格	High Current Density Surface Mount TMBSÂ® (Tr
V8P45-M3	VISHAY	获取价格	Low forward voltage drop, low power losses
V8P45-M3/86A	VISHAY	获取价格	High Current Density Surface Mount TMBSÂ® (Tr
V8P45-M3/87A	VISHAY	获取价格	High Current Density Surface Mount TMBSÂ® (Tr
V8P45-M3_15	VISHAY	获取价格	High Current Density Surface Mountnull Trench MOS Barrier Schottky Rectifier
V8P6	VISHAY	获取价格	High Current Density Surface Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V8P6-M3_15	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V8P8	VISHAY	获取价格	High Current Density Surface Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V8P8HM3	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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