Datasheet > V8P6

V8P6

更新时间： 2024-09-30 14:55:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	90K
描述
High Current Density Surface Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.37 V at IF = 4 A

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

V8P6 数据手册

V8P6

www.vishay.com

Vishay General Semiconductor

High Current Density Surface Mount

TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.37 V at I_F= 4 A

FEATURES

eSMP^®Series

Available

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

SMPC (TO-277A)

• AEC-Q101 qualified available

- Automotive ordering code; base P/NHM3

Anode 1

Anode 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Cathode

TYPICAL APPLICATIONS

ADDITIONAL RESOURCES

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

3D Models

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: SMPC (TO-277A)

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

8.0 A

60 V

V_RRM

Base P/N-M3

- halogen-free, RoHS-compliant, and

commercial grade

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified

I_FSM

V_Fat I_F= 8.0 A (T_A= 125 °C)

T_Jmax.

140 A

0.46 V

150 °C

(“_X” denotes revision code e.g. A, B,.....)

Package

SMPC (TO-277A)

Single

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

Circuit configuration

M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V8P6

V86

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F

8.0

Maximum average forward rectified current (fig. 1)

(2)

I_F

4.2

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

140

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

Notes

(1)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended copper pad area

(2)

Revision: 27-Nov-2019

Document Number: 87708

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与V8P6相关器件

型号	品牌	获取价格	描述	数据表
V8P6-M3_15	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V8P8	VISHAY	获取价格	High Current Density Surface Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V8P8HM3	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V8P8-M3	VISHAY	获取价格	Ideal for automated placement
V8P8-M3_15	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V8PA10	VISHAY	获取价格	Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier
V8PA103	VISHAY	获取价格	Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier
V8PA12	VISHAY	获取价格	Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier
V8PA12-M3/I	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2.5A, 120V V(RRM), Silicon, DO-221BC,
V8PA15	VISHAY	获取价格	Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier

与V8P6相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

27
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

23
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

22
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

35

产品中心

服务支持

精选活动

关于我们

帮助中心

V8P6

V8P6 数据手册

与V8P6相关器件

与V8P6相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

V8P6

V8P6 数据手册

与V8P6相关器件

与V8P6相关文章

您还可以找

您在本页遇到什么问题？