Datasheet > V8P6-M3_15

V8P6-M3_15

更新时间： 2024-09-30 01:25:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	83K
描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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V8P6-M3_15 数据手册

V8P6-M3, V8P6HM3

Vishay General Semiconductor

www.vishay.com

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.37 V at I_F= 4 A

FEATURES

TMBS^®eSMP^®Series

Available

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

TO-277A (SMPC)

• AEC-Q101 qualified available

- Automotive ordering code; base P/NHM3

Anode 1

Anode 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Cathode

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

PRIMARY CHARACTERISTICS

MECHANICAL DATA

I_F(AV)

8.0 A

60 V

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

V_RRM

Base P/N-M3

commercial grade

Base P/NHM3

AEC-Q101 qualified

halogen-free, RoHS-compliant, and

I_FSM

V_Fat I_F= 8.0 A (T_A= 125 °C)

T_Jmax.

140 A

0.46 V

150 °C

halogen-free, RoHS-compliant, and

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified 

(“_X” denotes revision code e.g. A, B,.....)

Package

TO-277A (SMPC)

Single die

Diode variation

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V8P6

V86

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F

8.0

Maximum average forward rectified current (fig. 1)

(2)

I_F

4.2

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

140

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

Notes

(1)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended copper pad area

(2)

Revision: 04-May-15

Document Number: 87708

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V8P6-M3_15相关器件

型号	品牌	获取价格	描述	数据表
V8P8	VISHAY	获取价格	High Current Density Surface Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V8P8HM3	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V8P8-M3	VISHAY	获取价格	Ideal for automated placement
V8P8-M3_15	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V8PA10	VISHAY	获取价格	Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier
V8PA103	VISHAY	获取价格	Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier
V8PA12	VISHAY	获取价格	Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier
V8PA12-M3/I	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2.5A, 120V V(RRM), Silicon, DO-221BC,
V8PA15	VISHAY	获取价格	Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier
V8PA22	VISHAY	获取价格	Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier

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