V8P22
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount
TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.6 V at IF = 4 A
FEATURES
®
eSMP Series
Available
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
K
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
1
• High efficiency operation
2
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
SMPC (TO-277A)
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
K
Anode 1
Anode 2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Cathode
LINKS TO ADDITIONAL RESOURCES
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
3
D
3D Models
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
IF(AV)
8 A
VRRM
200 V
140 A
0.68 V
175 °C
Base P/N-M3
commercial grade
Base P/NHM3
-
halogen-free, RoHS-compliant, and
halogen-free, RoHS-compliant and
IFSM
VF at IF = 8 A
TJ max.
-
AEC-Q101 qualified
Package
SMPC (TO-277A)
Single
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Circuit configuration
M3 and HM3 suffix meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V8P22
V822
200
8
UNIT
Device marking code
Maximum repetitive peak reverse voltage
VRRM
V
A
(1)
IF(AV)
Maximum average forward rectified current (fig. 1)
(2)
IF(AV)
2.9
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
140
A
(3)
Operating junction temperature range
Storage temperature range
TJ
-40 to +175
-55 to +175
°C
°C
TSTG
Notes
(1)
(2)
(3)
Mounted on 30 mm x 30 mm pad ares aluminum PCB
Free air, mounted on recommended pad area
The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RθJA
Revision: 01-Feb-2021
Document Number: 87001
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000