Datasheet > V8P22C

V8P22C

更新时间： 2024-02-12 14:09:34

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	97K
描述
High Current Density Surface-Mount TMBSÂ® (Trench MOS Barrier Schottky) Rectifier

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V8P22C 数据手册

V8P22C

Vishay General Semiconductor

www.vishay.com

High Current Density Surface-Mount

TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.61 V at I_F= 2 A

FEATURES

• Very low profile - typical height of 1.1 mm

eSMP^®Series

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

SMPC (TO-277A)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Anode 1

Anode 2

Cathode

TYPICAL APPLICATIONS

LINKS TO ADDITIONAL RESOURCES

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters and polarity protection

applications.

3D Models

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: SMPC (TO-277A)

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

2 x 4.0 A

200 V

Base P/N-M3

commercial grade

Base P/NHM3

halogen-free, RoHS-compliant, and

halogen-free, RoHS-compliant and

V_RRM

I_FSM

80 A

V_Fat I_F= 4 A

T_Jmax.

0.69 V

175 °C

AEC-Q101 qualified

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meets JESD 201 class 2 whisker test

Package

SMPC (TO-277A)

Common cathode

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V8P22C

V822C

200

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F(AV)

8.0

Maximum average forward rectified current per device (fig. 1)

(2)

I_F(AV)

3.1

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

(3)

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

-55 to +175

°C

T_J, T_STG

Notes

(1)

(2)

(3)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended pad area

The heat generated must be less than the thermal conductivity from junction-to-ambient: dP_D/dT_J< 1/R_θJA

Revision: 02-Feb-2021

Document Number: 98169

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与V8P22C相关器件

型号	品牌	获取价格	描述	数据表
V8P22CHM3/H	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V8P22CHM3/I	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V8P22C-M3/H	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V8P22C-M3/I	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V8P22HM3/H	VISHAY	获取价格	Rectifier Diode,
V8P22HM3/I	VISHAY	获取价格	High Current Density Surface Mount TMBSÂ® (Tr
V8P22-M3/H	VISHAY	获取价格	High Current Density Surface Mount TMBSÂ® (Tr
V8P22-M3/I	VISHAY	获取价格	High Current Density Surface Mount TMBSÂ® (Tr
V8P45	VISHAY	获取价格	High Current Density Surface Mount TMBSÂ® (Tr
V8P45HM3	VISHAY	获取价格	Low forward voltage drop, low power losses

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