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V58C265164S PDF预览

V58C265164S

更新时间: 2022-11-27 16:17:42
品牌 Logo 应用领域
MOSEL 动态存储器双倍数据速率
页数 文件大小 规格书
44页 451K
描述
64 Mbit DDR SDRAM 2.5 VOLT 4M X 16

V58C265164S 数据手册

 浏览型号V58C265164S的Datasheet PDF文件第6页浏览型号V58C265164S的Datasheet PDF文件第7页浏览型号V58C265164S的Datasheet PDF文件第8页浏览型号V58C265164S的Datasheet PDF文件第10页浏览型号V58C265164S的Datasheet PDF文件第11页浏览型号V58C265164S的Datasheet PDF文件第12页 
MOSEL VITELIC  
V58C265164S  
Output Data (DQ) and Data Strobe (DQS) Timing Relative to the Clock (CK)  
During Read Cycles  
(CAS Latency = 2.5; Burst Length = 4)  
T4  
T0  
T1  
T2  
T3  
CK, CK  
READ  
NOP  
NOP  
NOP  
NOP  
Command  
t
(max)  
DQSCK  
t
(min)  
DQSCK  
DQS  
DQ  
t
(max)  
AC  
t
(min)  
AC  
D
D
D
D
3
0
1
2
The minimum time during which the output data (DQ) is valid is critical for the receiving device (i.e., a mem-  
ory controller device). This also applies to the data strobe during the read cycle since it is tightly coupled to  
the output data. The minimum data output valid time (tDV) and minimum data strobe valid time (tDQSV) are de-  
rived from the minimum clock high/low time minus a margin for variation in data access and hold time due to  
DLL jitter and power supply noise.  
V58C265164S Rev. 1.7 August 2001  
9

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