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V58C3643204SAT PDF预览

V58C3643204SAT

更新时间: 2022-11-27 16:17:42
品牌 Logo 应用领域
MOSEL 动态存储器双倍数据速率
页数 文件大小 规格书
12页 261K
描述
HIGH PERFORMANCE 3.3 VOLT 2M X 32 DDR SDRAM 4 X 512K X 32

V58C3643204SAT 数据手册

 浏览型号V58C3643204SAT的Datasheet PDF文件第2页浏览型号V58C3643204SAT的Datasheet PDF文件第3页浏览型号V58C3643204SAT的Datasheet PDF文件第4页浏览型号V58C3643204SAT的Datasheet PDF文件第5页浏览型号V58C3643204SAT的Datasheet PDF文件第6页浏览型号V58C3643204SAT的Datasheet PDF文件第7页 
V58C3643204SAT  
PRELIMINARY  
HIGH PERFORMANCE  
3.3 VOLT 2M X 32 DDR SDRAM  
4 X 512K X 32  
45  
50  
55  
60  
System Frequency (fCK  
)
225MHz  
200 MHz  
5 ns  
183 MHz  
5.5 ns  
166 MHz  
6 ns  
Clock Cycle Time (tCK3  
Clock Cycle Time (tCK4  
)
)
4.5 ns  
Features  
Description  
4 banks x 512K x 32 organization  
High speed data transfer rates with system  
frequency up to 225 MHz  
The V58C3643204SAT is a four bank DDR  
DRAM organized as 4 banks x 512K x 32. The  
V58C3643204SAT achieves high speed data  
transfer rates by employing a chip architecture that  
prefetches multiple bits and then synchronizes the  
output data to a system clock  
Data Mask for Write Control (DM)  
Four Banks controlled by BA0 & BA1  
Programmable CAS Latency: 3, 4  
Programmable Wrap Sequence: Sequential  
or Interleave  
Programmable Burst Length:  
2, 4, 8 full page for Sequential Type  
2, 4, 8 full page for Interleave Type  
Automatic and Controlled Precharge Command  
Suspend Mode and Power Down Mode  
Auto Refresh and Self Refresh  
Refresh Interval: 2048 cycles/16ms  
Available in 100-pin TQFP  
All of the control, address, circuits are synchro-  
nized with the positive edge of an externally sup-  
plied clock. I/O transactions are possible on both  
edges of DQS.  
Operating the four memory banks in an inter-  
leaved fashion allows random access operation to  
occur at a higher rate than is possible with standard  
DRAMs. A sequential and gapless data rate is pos-  
sible depending on burst length, CAS latency and  
speed grade of the device.  
SSTL-2 Compatible I/Os  
Double Data Rate (DDR)  
Bidirectional Data Strobe (DQs) for input and  
output data, active on both edges  
On-Chip DLL aligns DQ and DQs transitions with  
CLK transitions  
Differential clock inputs CLK and CLK  
Power Supply 3.3V ± 0.3V  
Device Usage Chart  
Operating  
Temperature  
Range  
Package Outline  
CLK Cycle Time (ns)  
Power  
Temperature  
Mark  
100-pin TQFP  
-45  
-50  
-55  
-60  
Std.  
L
0°C to 70°C  
Blank  
V58C3643204SAT Rev. 1.4 August 2001  
1

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