Datasheet > V53C16258SHT50

V53C16258SHT50

更新时间： 2024-11-05 22:25:07

品牌	Logo	应用领域
MOSEL		/
页数	文件大小	规格书
20页	560K
描述
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

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中文翻译

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数据手册

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V53C16258SHT50 数据手册

V53C16258H

PRELIMINARY

MO SEL VITELIC

HIGH PERFORMANCE

256K X 16 EDO PAGE MODE

CMOS DYNAMIC RAM

OPTIONAL SELF REFRESH

HIGH PERFORMANCE

Max. RAS Access Time, (t

)

25 ns

13 ns

10 ns

45 ns

30 ns

16 ns

12 ns

60 ns

35 ns

18 ns

14 ns

70 ns

40 ns

20 ns

15 ns

75 ns

45 ns

22 ns

17 ns

80 ns

50 ns

24 ns

19 ns

90 ns

RAC

Max. Column Address Access Time, (t

)

CAA

Min. Extended Data Out Mode Cycle Time, (t

)

Min. Read/Write Cycle Time, (t

)

Features

Description

■ 256K x 16-bit organization

The V53C16258H is a high speed 262,144 x 16

bit high performance CMOS dynamic random

access memory. The V53C16258H offers a

combination of unique features including: EDO

Page Mode operation for higher sustained

bandwidth with Page Mode cycle times as short as

10ns. All inputs are TTL compatible. Input and

output capicatance is significantly lowered to

increase performance and minimize loading. These

features make the V53C16258H ideally suited for a

wide variety of high performance computer systems

and peripheral applications.

■ EDO Page Mode for a sustained data rate of

100 MHz

■ RAS access time: 25, 30, 35, 40, 45, 50 ns

■ Dual CAS Inputs

■ Low power dissipation

■ Read-Modify-Write, RAS-Only Refresh,

CAS-Before-RAS Refresh

■ Optional Self Refresh (V53C16258SH)

■ Refresh Interval: 512 cycles/8 ms

■ Available in 40-pin 400 mil SOJ and 40/44L-pin

400 mil TSOP-II packages

■ Single +5V ±10% Power Supply

■ TTL Interface

Device Usage Chart

Operating

Temperature

Range

Package Outline

Access Time (ns)

Power

Temperature

Mark

•

Std.

0°C to 70°C

•

Blank

–40°C to +85°C

•

V53C16258H Rev. 3.8 November 1999

12 3 4 5 6 7...20

中文翻译

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