Datasheet > V53C1664H

V53C1664H

更新时间： 2024-11-06 08:15:15

品牌	Logo	应用领域
MOSEL		/
页数	文件大小	规格书
18页	216K
描述
HIGH PERFORMANCE 64K X 16 BIT FAST PAGE MODE DUAL CAS CMOS DYNAMIC RAM

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数据手册

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V53C1664H 数据手册

V53C1664H

MO SEL VITELIC

HIGH PERFORMANCE

64K X 16 BIT FAST PAGE MODE

DUAL CAS CMOS DYNAMIC RAM

HIGH PERFORMANCE

Max. RAS Access Time, (t

)

30 ns

16 ns

19 ns

65 ns

35 ns

18 ns

21 ns

70 ns

40 ns

20 ns

23 ns

75 ns

45 ns

22 ns

25 ns

80 ns

50 ns

24 ns

28 ns

90 ns

RAC

Max. Column Address Access Time, (t

)

CAA

Min. Fast Page Mode Cycle Time, (t

)

Min. Read/Write Cycle Time, (t

)

Features

Description

■ 64K x 16-bit organization

■ Fast Page Mode for a sustained data rate

of 53 MHz

■ RAS access time: 30, 35, 40, 45, 50ns

■ Dual CAS Inputs

■ Low Power Dissipation

■ Read-Modify-Write, RAS-Only Refresh,

CAS-Before-RAS Refresh

■ Refresh Interval: 256 cycles/4 ms

■ Available in 40-pin 400 mil SOJ and 40/44L-pin

400 mil TSOP-II packages

The V53C1664H is a 65,536 x 16 bit high

performance CMOS dynamic random access

memory. The V53C1664H offers Fast Page mode

with dual CAS inputs. The V53C1664H has

symmetric address, 8-bit row and 8-bit column.

All inputs are TTL compatible. Fast Page Mode

operation allows random access up to 256 x 16

bits, within a page, with cycle times as short as

19ns.

The V53C1664H is ideally suited for a wide

variety of high performance computer systems and

peripheral applications.

■ Single +5V±10% Power Supply

■ TTL Interface

Device Usage Chart

Operating

Temperature

Range

Package Outline

Access Time (ns)

Power

Temperature

Mark

Std.

0°C to 70°C

•

Blank

V53C1664H Rev. 1.0 February 1998

12 3 4 5 6 7...18

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