Datasheet > V35PW12

V35PW12

更新时间： 2024-11-25 00:35:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	122K
描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A

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V35PW12 数据手册

V35PW12

Vishay General Semiconductor

www.vishay.com

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.40 V at I_F= 5 A

FEATURES

• Very low profile - typical height of 1.3 mm

TMBS^®eSMP^®Series

• Trench MOS Schottky technology

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

SlimDPAK (TO-252AE)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PIN 1

PIN 2

HEATSINK

TYPICAL APPLICATIONS

For use in low voltage high frequency DC/DC converters,

freewheeling diodes, and polarity protection applications.

PRIMARY CHARACTERISTICS

I_F(AV)

35 A

MECHANICAL DATA

V_RRM

120 V

260 A

0.70 V

150 °C

Case: SlimDPAK (TO-252AE)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

I_FSM

V_Fat I_F= 35 A (T_A= 125 °C)

T_Jmax.

Base P/NHM3

- halogen-free, RoHS-compliant, and

AEC-Q101 qualified

Package

SlimDPAK (TO-252AE)

Single

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meets JESD 201 class 2 whisker test

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V35PW12

120

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig. 1)

V_RRM

(1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

260

(2)

Operating junction temperature range

Storage temperature range

T_J

-40 to +150

-55 to +150

°C

T_STG

Notes

(1)

With infinite heatsink

The heat generated must be less than the thermal conductivity from junction to ambient: dP_D/dT_J< 1/R_θJA

(2)

Revision: 01-Jun-17

Document Number: 87683

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V35PW12相关器件

型号	品牌	获取价格	描述	数据表
V35PW15	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V35PW15HM3/I	VISHAY	获取价格	DIODE SCHOTTKY 150V 35A SLIMDPAK
V35PW15-M3/I	VISHAY	获取价格	DIODE SCHOTTKY 150V 35A SLIMDPAK
V35PW22	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V35PW45	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V35PW45HM3/I	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 35A, 45V V(RRM), Silicon, DPAK-3/2
V35PW45-M3/I	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V35PW60	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V35PWL63	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V35PWM10	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low

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