Datasheet > V35PW22

V35PW22

更新时间： 2023-12-06 20:10:09

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	135K
描述
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 5 A

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

V35PW22 数据手册

V35PW22

Vishay General Semiconductor

www.vishay.com

High Current Density Surface-Mount

TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.54 V at I_F= 5 A

FEATURES

eSMP^®Series

Available

• Very low profile - typical height of 1.3 mm

• Trench MOS Schottky technology

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

SlimDPAK (TO-252AE)

PIN 1

PIN 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

HEATSINK

TYPICAL APPLICATIONS

ADDITIONAL RESOURCES

For use in low voltage high frequency DC/DC converters,

freewheeling diodes, and polarity protection applications.

3D Models

MECHANICAL DATA

Case: SlimDPAK (TO-252AE)

PRIMARY CHARACTERISTICS

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified

I_F(AV)

35 A

200 V

260 A

0.77 V

175 °C

V_RRM

I_FSM

(“_X” denotes revision code e.g. A, B,.....)

V_Fat I_F= 35 A (T_J= 125 °C)

T_Jmax.

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meets JESD 201 class 2 whisker test

Package

SlimDPAK (TO-252AE)

Single

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V35PW22

200

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig. 1)

V_RRM

(1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

260

(2)

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

-55 to +175

°C

T_STG

Notes

(1)

With infinite heatsink

The heat generated must be less than the thermal conductivity from junction to ambient: dP_D/dT_J< 1/R_θJA

(2)

Revision: 19-Apr-2023

Document Number: 87006

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

下载PDF

与V35PW22相关器件

型号	品牌	描述	获取价格	数据表
V35PW45	VISHAY	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier	获取价格
V35PW45HM3/I	VISHAY	Rectifier Diode, Schottky, 1 Phase, 1 Element, 35A, 45V V(RRM), Silicon, DPAK-3/2	获取价格
V35PW45-M3/I	VISHAY	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier	获取价格
V35PW60	VISHAY	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low	获取价格
V35PWL63	VISHAY	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low	获取价格
V35PWM10	VISHAY	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low	获取价格