Datasheet > V35PWM10

V35PWM10

更新时间： 2024-11-21 14:55:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	115K
描述
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.41 V at IF = 5 A

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V35PWM10 数据手册

V35PWM10

Vishay General Semiconductor

www.vishay.com

High Current Density Surface-Mount

TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.41 V at I_F= 5 A

FEATURES

eSMP^®Series

• Very low profile - typical height of 1.3 mm

• Trench MOS Schottky technology

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

SlimDPAK (TO-252AE)

PIN 1

PIN 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

HEATSINK

TYPICAL APPLICATIONS

click logo to get started

DESIGN SUPPORT TOOLS

For use in low voltage high frequency DC/DC converters,

freewheeling diodes, and polarity protection applications.

Models

Available

MECHANICAL DATA

Case: SlimDPAK (TO-252AE)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

PRIMARY CHARACTERISTICS

I_F(AV)

35 A

100 V

260 A

0.68 V

175 °C

V_RRM

Base P/NHM3

- halogen-free, RoHS-compliant, and

AEC-Q101 qualified

I_FSM

V_Fat I_F= 35 A (T_A= 125 °C)

T_Jmax.

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meets JESD 201 class 2 whisker test

Package

SlimDPAK (TO-252AE)

Single



Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V35PWM10

100

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig. 1)

V_RRM

(1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

260

(2)

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

-55 to +175

°C

T_STG

Notes

(1)

With infinite heatsink

The heat generated must be less than the thermal conductivity from junction to ambient: dP_D/dT_J< 1/R_JA

(2)

Revision: 11-Feb-2019

Document Number: 87502

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V35PWM10相关器件

型号	品牌	获取价格	描述	数据表
V35PWM103	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V35PWM12	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V35PWM12HM3/I	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V35PWM12-M3/I	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V35PWM15	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V35PWM153	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V35PWM15HM3/I	VISHAY	获取价格	DIODE SCHOTTKY 150V 35A SLIMDPAK
V35PWM15-M3/I	VISHAY	获取价格	DIODE SCHOTTKY 150V 35A SLIMDPAK
V35PWM45	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V35PWM60	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low

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