Datasheet > V35PWM12HM3/I

V35PWM12HM3/I

更新时间： 2024-11-21 01:13:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	123K
描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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V35PWM12HM3/I 数据手册

V35PWM12

Vishay General Semiconductor

www.vishay.com

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.42 V at I_F= 5 A

FEATURES

• Very low profile - typical height of 1.3 mm

TMBS^®eSMP^®Series

• Trench MOS Schottky technology

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

SlimDPAK

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PIN 1

PIN 2

HEATSINK

TYPICAL APPLICATIONS

For use in low voltage high frequency DC/DC converters,

freewheeling diodes, and polarity protection applications.

PRIMARY CHARACTERISTICS

I_F(AV)

35 A

MECHANICAL DATA

V_RRM

120 V

260 A

Case: SlimDPAK

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

Base P/NHM3

AEC-Q101 qualified

I_FSM

V_Fat I_F= 35 A (T_A= 125 °C)

T_Jmax.

0.68 V

- halogen-free, RoHS-compliant, and

175 °C

Package

SlimDPAK

Single die

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

Diode variation

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V35PWM12

120

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig. 1)

V_RRM

(1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

260

Operating junction and storage temperature range

T_J, T_STG

-40 to +175

°C

Note

(1)

With infinite heat sink

Revision: 21-Dec-15

Document Number: 87653

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V35PWM12HM3/I相关器件

型号	品牌	获取价格	描述	数据表
V35PWM12-M3/I	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V35PWM15	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V35PWM153	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V35PWM15HM3/I	VISHAY	获取价格	DIODE SCHOTTKY 150V 35A SLIMDPAK
V35PWM15-M3/I	VISHAY	获取价格	DIODE SCHOTTKY 150V 35A SLIMDPAK
V35PWM45	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V35PWM60	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V35PWM63	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V35ROM	ETC	获取价格	Microcontroller
V35RTOS	ETC	获取价格	Microcontroller

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