Datasheet > V20150S_15

V20150S_15

更新时间： 2024-01-11 12:03:48

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	152K
描述
High Voltage Trench MOS Barrier Schottky Rectifier

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中文翻译

获取价格

数据手册

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V20150S_15 数据手册

V20150S-E3, VF20150S-E3, VB20150S-E3, VI20150S-E3

www.vishay.com

Vishay General Semiconductor

High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.55 V at I_F= 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

TO-220AB

ITO-220AB

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106 (for TO-220AB, ITO-220AB,

and TO-262AA package)

V20150S

VF20150S

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

PIN 1

PIN 3

PIN 1

PIN 3

PIN 2

CASE

TYPICAL APPLICATIONS

TO-263AB

TO-262AA

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters and reverse battery protection.

MECHANICAL DATA

Case:

TO-220AB,

ITO-220AB,

TO-263AB

and

TO-262AA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

VB20150S

VI20150S

PIN 1

PIN 3

PIN 2

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

HEATSINK

E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

PRIMARY CHARACTERISTICS

Mounting Torque: 10 in-lbs max.

I_F(AV)

20 A

150 V

160 A

0.75 V

150 °C

V_RRM

I_FSM

V_Fat I_F= 20 A

T_Jmax.

TO-220AB, ITO-220AB,

TO-263AB, TO-262AA

Package

Diode variation

Common cathode

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V20150S

VF20150S

VB20150S

VI20150S

UNIT

Max. repetitive peak reverse voltage

Max. average forward rectified current (fig. 1)

V_RRM

150

I_F(AV)

Peak forward surge current 8.3 ms single half

I_FSM

E_AS

160

150

0.5

sine-wave superimposed on rated load

Non-repetitive avalanche energy

at T_J= 25 °C, L = 60 mH

Peak repetitive reverse current

at t_p= 2 μs, 1 kHz, T_J= 38 °C 2 °C

I_RRM

dV/dt

V_AC

V/μs

Voltage rate of change (rated V_R)

10 000

1500

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

Revision: 13-Aug-13

Document Number: 89059

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

中文翻译

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与V20150S_15相关器件

型号	品牌	获取价格	描述	数据表
V20150S-E3	VISHAY	获取价格	High Voltage Trench MOS Barrier Schottky Rectifier
V20150S-E3/4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V20150SG	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A
V20150SG_11	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V20150SG_12	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V20150SG-E3	VISHAY	获取价格	High Voltage Trench MOS Barrier Schottky Rectifier
V20150SG-E3/4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A
V20150SGHM3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V20150SG-M3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V20150SHM3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier

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