V20150S-E3, VF20150S-E3, VB20150S-E3, VI20150S-E3
www.vishay.com
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.55 V at IF = 5 A
FEATURES
TMBS®
• Trench MOS Schottky technology
TO-220AB
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB,
and TO-262AA package)
3
3
2
2
1
1
V20150S
VF20150S
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PIN 1
PIN 3
PIN 1
PIN 3
PIN 2
PIN 2
CASE
TYPICAL APPLICATIONS
TO-263AB
TO-262AA
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
K
K
MECHANICAL DATA
A
Case:
TO-220AB,
ITO-220AB,
TO-263AB
and
NC
TO-262AA
3
2
1
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
VB20150S
VI20150S
PIN 1
PIN 3
NC
A
K
PIN 2
K
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HEATSINK
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
PRIMARY CHARACTERISTICS
Mounting Torque: 10 in-lbs max.
IF(AV)
20 A
150 V
160 A
0.75 V
150 °C
VRRM
IFSM
VF at IF = 20 A
TJ max.
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Package
Diode variation
Common cathode
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20150S
VF20150S
VB20150S
VI20150S
UNIT
Max. repetitive peak reverse voltage
Max. average forward rectified current (fig. 1)
VRRM
150
20
V
A
IF(AV)
Peak forward surge current 8.3 ms single half
IFSM
EAS
160
150
0.5
A
sine-wave superimposed on rated load
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH
mJ
Peak repetitive reverse current
at tp = 2 μs, 1 kHz, TJ = 38 °C 2 °C
IRRM
dV/dt
VAC
A
V/μs
V
Voltage rate of change (rated VR)
10 000
1500
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
Revision: 13-Aug-13
Document Number: 89059
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000