Datasheet > V20200C_09

V20200C_09

更新时间： 2024-01-26 08:22:19

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	160K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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V20200C_09 数据手册

New Product

V20200C, VF20200C, VB20200C & VI20200C

Vishay General Semiconductor

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V = 0.60 V at I = 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

TO-220AB

ITO-220AB

• Low forward voltage drop, low power

losses

• High efficiency operation

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106 (for TO-220AB, ITO-220AB and

TO-262AA package)

V20200C

VF20200C

TO-262AA

PIN 1

PIN 3

PIN 1

PIN 3

PIN 2

CASE

PIN 2

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TO-263AB

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

MECHANICAL DATA

VB20200C

VI20200C

Case: TO-220AB, ITO-220AB, TO-263AB and

TO-262AA

PIN 1

PIN 2

PIN 1

PIN 3

PIN 2

HEATSINK

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 10 A

V_RRM

200 V

120 A

0.68 V

150 °C

I_FSM

Polarity: As marked

V_Fat I_F= 10 A

T_Jmax.

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL V20200C VF20200C VB20200C VI20200C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

I_F(AV)

I_FSM

E_AS

200

per device

per diode

Maximum average forward rectified current (fig. 1)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load per diode

120

100

Non-repetitive avalanche energy

at T_J= 25 °C, L = 60 mH per diode

Peak repetitive reverse current at t_p= 2 µs, 1 kHz,

T_J= 38 °C 2 °C per diode

I_RRM

dV/dt

0.5

10 000

V/µs

Voltage rate of change (rated V_R)

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

V_AC

1500

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

°C

Document Number: 89072

Revision: 24-Jun-09

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

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与V20200C_09相关器件

型号	品牌	获取价格	描述	数据表
V20200C-E3	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier
V20200C-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A
V20200C-E3-4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20200G	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20200G-E3	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier
V20200G-E3/4W	VISHAY	获取价格	DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3,
V20200G-E3-4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20202C	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A
V20202C-M3/4W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB, HALGOE
V20202G	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.61 V at IF = 5 A

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