Datasheet > V15P15-M3/I

V15P15-M3/I

更新时间： 2024-11-02 02:51:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	106K
描述
High Current Density Surface Mount TMBSÂ® (Trench MOS Barrier Schottky) Rectifier

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V15P15-M3/I 数据手册

V15P15

Vishay General Semiconductor

www.vishay.com

High Current Density Surface Mount

TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.54 V at I_F= 5 A

FEATURES

• Very low profile - typical height of 1.1 mm

eSMP^®Series

Available

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

SMPC (TO-277A)

• AEC-Q101 qualified available

- Automotive ordering code; base P/NHM3

Anode 1

Anode 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Cathode

TYPICAL APPLICATIONS

ADDITIONAL RESOURCES

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

3D Models

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: SMPC (TO-277A)

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

15 A

150 V

220 A

0.66 V

150 °C

Base P/N-M3

halogen-free, RoHS-compliant, and

V_RRM

commercial grade

I_FSM

Base P/NHM3

- halogen-free, RoHS-compliant and

V_Fat I_F= 15 A (125 °C)

T_Jmax.

AEC-Q101 qualified

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meets JESD 201 class 2 whisker test

Package

SMPC (TO-277A)

Single

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V15P15

V1515

150

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F(AV)

Maximum DC forward current

(2)

I_F(AV)

3.2

Peak forward surge current 10 ms single half sine-wave 

superimposed on rated load

I_FSM

220

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

°C

Notes

(1)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended pad area

(2)

Revision: 18-Dec-2019

Document Number: 87627

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V15P15-M3/I相关器件

型号	品牌	获取价格	描述	数据表
V15P22	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V15P22HM3/H	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V15P22HM3/I	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V15P22-M3/H	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V15P22-M3/I	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V15P45	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V15P45_1109	VISHAY	获取价格	5High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V15P45_15	VISHAY	获取价格	High Current Density Surface Mount
V15P45HM3/86A	VISHAY	获取价格	DIODE 4.8 A, 45 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLA
V15P45HM3/87A	VISHAY	获取价格	DIODE 4.8 A, 45 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLA

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