Datasheet > V15P45S_13

V15P45S_13

更新时间： 2024-01-23 14:37:35

品牌	Logo	应用领域
威世 - VISHAY		电池
页数	文件大小	规格书
5页	92K
描述
SMD Photovoltaic Solar Cell Protection Schottky Rectifiers

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中文翻译

获取价格

数据手册

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V15P45S_13 数据手册

New Product

V15P45S

Vishay General Semiconductor

SMD Photovoltaic Solar Cell Protection Schottky Rectifiers

Ultra Low V_F= 0.31 V at I_F= 5 A

FEATURES

TMBS^®eSMP^®Series

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TO-277A (SMPC)

Anode 1

Anode 2

• Halogen-free according to IEC 61249-2-21 definition

Cathode

TYPICAL APPLICATIONS

For use in solar cell junction box as a bypass diode for

protection, using DC forward current without reverse bias.

PRIMARY CHARACTERISTICS

MECHANICAL DATA

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

15 A

45 V

V_RRM

I_FSM

210 A

0.42 V

150 °C

Base P/N-M3

- halogen-free, RoHS compliant, and

commercial grade

V_Fat I_F= 15 A

T_OPmax.

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V15P45S

1545S

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F

Maximum DC forward current

(2)

I_F

4.8

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

210

Junction temperature in DC forward current

without reverse bias, t  1 h

(3)

T_J

 200

°C

Operating junction temperature range

Storage temperature range

T_OP

- 40 to + 150

- 40 to + 175

°C

T_STG

Notes

(1)

(2)

(3)

Mounted on 30 mm x 30 mm aluminum PCB

Free air, mounted on recommended copper pad area

Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test

Document Number: 89343

Revision: 19-Apr-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与V15P45S_13相关器件

型号	品牌	获取价格	描述	数据表
V15P45S-M3	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifiers
V15P45S-M3/86A	VISHAY	获取价格	DIODE 4.8 A, 45 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLA
V15P45S-M3/87A	VISHAY	获取价格	DIODE 4.8 A, 45 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLA
V15P45S-M3_15	VISHAY	获取价格	SMD Photovoltaic Solar Cell Protection Trench MOS Barrier Schottky Rectifiers
V15P45S-M3-86A	VISHAY	获取价格	SMD Photovoltaic Solar Cell Protection Schottky Rectifiers
V15P45S-M3-87A	VISHAY	获取价格	SMD Photovoltaic Solar Cell Protection Schottky Rectifiers
V15P6	VISHAY	获取价格	High Current Density Surface Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V15P6HM3	VISHAY	获取价格	Trench MOS Schottky technology
V15P6-M3	VISHAY	获取价格	Trench MOS Schottky technology
V15P6-M3_15	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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