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V15P8-M3/86A PDF预览

V15P8-M3/86A

更新时间: 2024-02-06 05:11:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 105K
描述
High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier

V15P8-M3/86A 数据手册

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V15P8  
www.vishay.com  
Vishay General Semiconductor  
High Current Density Surface Mount  
TMBS® (Trench MOS Barrier Schottky) Rectifier  
Ultra Low VF = 0.36 V at IF = 5 A  
FEATURES  
• Very low profile - typical height of 1.1 mm  
eSMP® Series  
Available  
• Ideal for automated placement  
K
• Trench MOS Schottky technology  
• Low forward voltage drop, low power losses  
1
• High efficiency operation  
2
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
SMPC (TO-277A)  
• AEC-Q101 qualified available  
- Automotive ordering code; base P/NHM3  
K
Anode 1  
Anode 2  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Cathode  
TYPICAL APPLICATIONS  
ADDITIONAL RESOURCES  
For use in low voltage high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
3
D
3
D
3D Models  
MECHANICAL DATA  
Case: SMPC (TO-277A)  
Molding compound meets UL 94 V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
15 A  
80 V  
Base P/N-M3  
-
halogen-free, RoHS-compliant, and  
VRRM  
commercial grade  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified   
IFSM  
VF at IF = 15 A (TA = 125 °C)  
TJ max.  
220 A  
0.55 V  
150 °C  
(“_X” denotes revision code e.g. A, B,.....)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix  
Package  
SMPC (TO-277A)  
Single  
Circuit configuration  
meets JESD 201 class 2 whisker test  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V15P8  
UNIT  
Device marking code  
V158  
Maximum repetitive peak reverse voltage  
VRRM  
80  
15  
V
A
(1)  
IF  
Maximum average forward rectified current (fig. 1)  
(2)  
IF  
4.6  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
220  
A
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-40 to +150  
Notes  
(1)  
Mounted on 30 mm x 30 mm pad areas aluminum PCB  
Free air, mounted on recommended copper pad area  
(2)  
Revision: 18-Dec-2019  
Document Number: 87717  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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